Design and Simulation of High Efficiency Silicon Light-Emitting Diodes
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Design and Simulation of High Efficiency Silicon Light-Emitting Diodes Grant Z. Pan1, Jaime Peretzman1, Dae H. Pak1, and Li P. Ren2 1 Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA, 90095 2 Nanoelectronics and Nanophotonics Laboratory, Global Nanosystems, Inc., Los Angeles, CA, 90025
ABSTRACT Four B-implanted p-n junction silicon light-emitting diode structures were designed and simulated under identical fabrication process and recombination mechanisms by using Silvaco simulators. In the simulation, the energy and dose of the B implant and the temperature of the post-implant anneal were varied to compare the structures in terms of band-to-band radiative recombination rates and locations. It was found that a pillar structure with a wrapped p-n junction has the greatest radiative recombination rate. Regardless the structure type, the maximum radiative recombination rate always occurs within the B-implanted p+ region. There exists a peak in the maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 ∞C, and the anneal temperature at peak increases while the implant dose increases. Furthermore, the radiative recombination rate always increases with the implant dose but it saturates at a high dose. However, the radiative recombination rate does not change significantly with the implant energy. INTRODUCTION High efficiency Si-based light sources including Si p-n junction light-emitting diodes (Si LEDs) are desired for advanced integrated nanoelectronics and emerging nanophotonics. It was found that a strong band-to-band (BB) radiative emission with internal quantum efficiency in the range of about 10-2 could be achieved from both B-implanted p-n Si LEDs [1] and P-implanted n-p Si LEDs [2]. However, there were discrepancies in literature about the mechanism and the location of such a strong BB emission. The discrepancies can be categorized into two groups, that is, (1) defect-engineering within the implanted region due to the spatial confinement from the highly strained extended defects precipitated during the post-implant anneal such as {113} rodlike defects [3] and dislocation loops [1], and (2) excess minority carrier recombination beyond the junction in the lightly doped substrate [2, 4]. Besides, there were also discrepancies about how the implant energy and dose [2, 6] and the post-implant anneal temperature [3, 5-6] would affect the strong BB emission and thus the quantum efficiency. In this paper, four B-implanted p-n junction Si LED structures were designed and simulated by using Silvaco simulators. The simulations were performed under identical fabrication process and recombination mechanisms, that is, BB radiative, and Shockley-Read-Hall (SRH) and Auger non-radiative. The primary intension is to explore how the implant parameters and the postimplant anneal conditions would affect the radiative and non-radiative recombination rates and distributions. Because the simulated SRH and Auger non-radiative recombination rate distrib
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