Comparison Study for TiN Films Deposited from Different Method: Chemical Vapor Deposition and Atomic Layer Deposition
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Comparison Study for TiN Films Deposited from Different Method: Chemical Vapor Deposition and Atomic Layer Deposition G
Byoung-Youp Kim, Seung-Hyun Lee, Sang-Gee Park, Ki-Young Oh and Juho Song ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do Do-Heyoung Kim Faculty of Applied Chemistry, College of Engineering, Chonnam National University 300 Yongbong-dong, Buk-Ku, KwangJu 500-757, Korea ABSTRACT G
This paper compared two different film deposition processes for formation of TiN barrier layers, conventional TiCl4-based chemical vapor deposition and atomic layer deposition (ALD). The 30nm thick TiN film deposited by conventional TiCl4-based CVD at the process temperature of 600oC followed by NH3 post-deposition anneal showed about 180 95 % of step coverage for the pattern aspect ratio of 6 on 0.35
cm of resistivity, over
contact diameters, and below 2
at.% of chlorine contents in the film. Meanwhile, the films deposited by ALD at 100oC lower process temperature than CVD showed much better film properties even without post-deposition anneal. It showed lower resistivity values and lower chlorine incorporation along with better step coverage characteristics. More detailed material analysis was done by AFM, SEM, and AES. INTRODUCTION G
The emergence of reactive sputtering has led to TiN films being deposited at temperatures below 500 oC. At these lower deposition temperatures, the use of TiN for silicon microelectronic technology has become attractive, because of the material’s excellent diffusion barrier characteristics, very good electrical conductivity and excellent adhesion/glue layer performance.1 Since then titanium nitride films have found many applications in integrated circuits especially for capacitor electrode barrier, contact and via barrier and ARC(anti reflective coating) on aluminum wiring that requires good diffusion barrier performance and good electrical conductivity. Through modification and development for sputter method like collimation2, ionized metal plasma3, sputtering is still the major deposition method for TiN but still has poor O7.8.1
step coverage problem. As circuit dimensions shrink and contact aspect ratio have increased, chemical vapor deposited TiN films using organic and inorganic precursors were developed to address the shortcomings of physical vapor deposited TiN: poor step coverage.4 However, chemical vapor deposition also has weak point. Though chemical vapor deposited TiN from TiCl4 and NH3 shows good step coverage and good film quality that is comparable to physically deposited TiN,5, 6 the deposition temperature should be higher than 600 oC and post treatment like NH3 flow is needed to reduce chlorine incorporation in the film to the level of
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