Computational Fluid Dynamics in the Carbon Nanotubes Synthesis by Chemical Vapor Deposition
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Computational Fluid Dynamics in the Carbon Nanotubes Synthesis by Chemical Vapor Deposition Alejandro Gómez Sánchez 1, Lada Domratcheva Lvova*1, Víctor López Garza 1, Ramón Román Doval1, María de Lourdes Mondragón Sánchez 2 1 Universidad Michoacana de San Nicolás de Hidalgo, Avenida Francisco J. Mujica S/N Ciudad Universitaria, C. P. 58030, Morelia, Michoacán, México. 2 Instituto Tecnológico de Morelia, Avenida Tecnológico 1500, C. P. 58120, Morelia, Michoacán, México. ABSTRACT In this paper, an experimental study aimed at achieving better control of the deposition patterns of carbon nanotubes (CNTs) is presented. CNTs were grown on a long of reactor by the catalytic chemical vapor deposition (CVD) of a benzene/ferrocene solution at 1073 K. The deposition patterns on the substrate were controlled for process times and carrier gas flow rates. In order to investigate the reaction mechanism and production rate for the growth of CNTs in catalyst CVD, computational fluid dynamics (CFD) model was developed in this study. Then the computational model was integrated with the dynamic model to optimize the process parameters formulating a correlation between turbulence, deposition rate for the growth of carbon nanotubes and parameters as process time and carrier gas flow rate. Scanning electron microscopes (SEM) are used to characterize carbon nanotubes products. Keywords: chemical vapor deposition (CVD), scanning electron microscopy (SEM), simulation. INTRODUCTION Today we need new materials to help us develop new technologies, nanotechnology helps us to manipulate the structures of materials and form others with very beneficial properties for the various applications of science. This study illustrates the application of CFD (computation fluid dynamic) by flow through a multi-step chemical reaction to predict the performance of carbon nanotubes in CVD (chemical vapor deposition) reactor. The objectives are simulated and analyze CFD in the synthesis of carbon nanotubes (CNTs) by CVD to optimize process parameters. The CNTs deposition profiles inside a chemical vapor deposition reactor are strongly dependent on the reaction temperatures, process time, feed gas flow rates, carrier gas flow rates and reactor geometry. Obtaining and optimizations of the simulation parameters propose generate a high degree of purity in the samples. This type of optimization becomes more and more difficult with an increasing number of design parameters. The advent of computing power reaching at relatively low cost has spurred the development of numerical models. One of the most important aspects in the production of carbon nanotubes is to control each and every one of the parameters and variables involved in the process. With the increase of parameters that need to be controlled and the complexity which entails, it is difficult to obtain an
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analytical solution to this problem and it is necessary to apply numerical methods. The use of these methods for parameter optimization in combination with the simulation is a promising method to overcome
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