Conductance Quantization in Memristive Structures Based on Poly-p-Xylylene
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Conductance Quantization in Memristive Structures Based on Poly-p-Xylylene B. S. Shvetsova,b,*, A. A. Minnekhanovb, A. A. Nesmelovb, M. N. Martyshova, V. V. Rylkovb,c, V. A. Deminb, and A. V. Emelyanovb,d a
Lomonosov Moscow State University, Department of Physics, Moscow, 119991 Russia b National Research Center “Kurchatov Institute”, Moscow, 123182 Russia c Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, 141190 Russia d Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow oblast, 141700 Russia *e-mail: [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—The results of studying the room-temperature conductance quantization of memristive structures based on poly-p-xylylene organic material with resistive switching are presented. The measurement procedures are shown and comparative analysis of manifestation of the effect upon switching structures to the high and low resistive states is presented. The possibility of specifying the stable quantum states of the conductance in memristive structures based on poly-p-xylylene is demonstrated. It is shown that some of these states possess short-term stability, while others possess long-term stability. These results open up new possibilities for using the conductance quantization effect in the implementation of neuromorphic systems. Keywords: memristor, organic electronics, poly-p-xylylene, conductance quantization DOI: 10.1134/S1063782620090250
1. INTRODUCTION Memristors (resistors with memory) are devices based on the reversible resistive switching (RS) effect. Their main functional feature lies in the ability to vary the resistance depending on the applied voltages and flowing current as well as to store the appearing resistive state after removing the voltage. RS phenomena between the high and low resistive states in metal/dielectric/metal (MDM) structures based on oxides were found more than 50 years ago (for example, review [1]). However, increased interest in their investigations has appeared recently, after revealing the memristive properties of MDM structures based on TiO2 – x nanolayers [2]. The motion of oxygen vacancies in the oxide under the effect of a strong electric field revealed in [2] makes it possible to continuously and reversibly vary/store the electrical resistance of MDM structures. This circumstance opens up prospects for their use in the fabrication of multilevel nonvolatile memory or elements emulating functions of the synapses (connections between neurons) when constructing the neuromorphic computational systems for the solution of so-called anthropomorphic problems [3–5]. Over the last decade, numerous different objects possessing the RS effect, which can be classified
depending on its mechanism, have been revealed [6, 7]. RS effects observed in MDM structures are usually explained by the electric-field drift of oxygen vacancies VO
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