Creating Novel Transport Properties in Electric Double Layer Field Effect Transistors Based on Layered Materials
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Creating Novel Transport Properties in Electric Double Layer Field Effect Transistors Based on Layered Materials J. T. Ye1, M. F. Craciun2, M. Koshino3, S. Russo2, Y. Kasahara1, H. T. Yuan1, H. Shimotani1, A. F. Morpurgo4 and Y. Iwasa1 1
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan 2 Center for Graphene Science, University of Exeter, EX4 4QL Exeter, United Kingdom 3 Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8551, Japan 4 DPMC and GAP, Université de Genéve, 24 quai Ernest Ansermet, CH1211 Geneva, Switzerland ABSTRACT We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n~1014 cm-2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×1014 cm-2 in graphene and its multi-layers. INTRODUCTION Transport through ultra-thin layered materials is fruitfully manipulated by the field effect. Especially, at the low carrier density (n~1012 cm-2) regime, it witnesses the exciting new physics originated from unusual chiral particles in graphene, an archetypal example in the layeredmaterial based transistors. Inspired by the material abundance, and richness variations in their properties on the carrier density, In this research, we aim at studying the transport properties in layered materials with extended carrier concentration, especially in the less explored higher density regime, utilizing the electrochemical principle of electric double layer formed at a liquid/solid interfaces. These liquid/solid interfaces are widely used in applications in catalytic activities and energy storage [1, 2], they are also important for the novel electronic functions in electric double layer transistors (EDLTs) exemplified by high performance organic electronics [3-7], fieldinduced electronic phase transitions [8-11], as well as superconductivity in SrTiO3 [12]. Broadening EDLT to creating novel transport properties within other materials is highly demanded for enriching material science. However, it is severely hampered by inadequate choice of materials and processing techniques [13]. Whereas, in layered materials, special advantage exist as high quality surface could be easily prepared by cleavage. Here we introduce an effective method using ionic liquids as gate dielectrics, mechanical micro-cleavage techniques for surface preparation, and report the observation of field-induced superconductivity showing Tc = 15.2 K on an atomically flat film of layered nitride compound, ZrNCl. And large amount of carriers could also be induced on other materials such a
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