Deposition and Characterization of Metallic Film Precursors for the Synthesis of Cu 2 ZnSnS 4 Thin Films for Photovoltai
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MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.509
Deposition and Characterization of Metallic Film Precursors for the Synthesis of Cu2ZnSnS4 Thin Films for Photovoltaic Applications T.B. Moipolai1, 2, 3, M Madhuku2, S.J. Moloi1 University of South Africa1, iThemba LABS2, University of Johannesburg3
Corresponding Author: [email protected]
Abstract
Copper Zinc Tin Sulphide (Cu2ZnSnS4) materials are of interest for Photovoltaic applications. In this work, i.e., the first phase of Cu 2ZnSnS4 synthesis, Cu-Zn-Sn film precursors were synthesised using electron beam deposition. The crystal structure of the synthesised film precursors were characterised by X-ray Diffraction (XRD) and elemental composition identification performed using Rutherford Backscattering Spectrometry (RBS). The synthesis results obtained are in agreement with those presented in the literature indicating that the metallic CZT film precursors were successfully synthesised.
INTRODUCTION Copper zinc tin sulphide, Cu2ZnSnS4 (CZTS), is a solar energy material comprising of both less toxic and more available elements [1]. The abundance and low toxicity of the elements in this quaternary compound semiconductor make it the material of choice for future photovoltaic applications compared to the currently used compounds, such as copper indium selenide (CIS), copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) which are rare and toxic [2]. In addition to this, CZTS has a direct band gap ranging between 1.4 and 1.5 eV and a large absorption coefficient of over 104 cm-1 [3]. There are two types of CZTS synthesis methods, namely, vacuum based and non-vacuum based methods [4]. The vacuum based methods involve deposition of the elemental constituents of CZTS on a substrate by either sputtering or evaporation of target sources under certain pressure and temperature [4]. Spray pyrolysis,
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electrochemical deposition, and spin coating of precursor solutions are types of nonvacuum methods [5]. The two methods have been successfully used in the synthesis of CZTS materials. However, vacuum deposition methods stand out as they give the user choice to control the chemical composition and phase profile in the growth of thin films [4]. Pawar et al. [6] have deposited CZT precursors on Molybdenum-coated glass substrates, i.e., (Mo/Zn/Sn/Cu) annealed at 350° in vacuum by implementing a stacked metallic precursor’s method. Two alloys, i.e., CuSn and CuZn were formed during the deposition process. Thereafter, the sulfurization process was performed in a tubular furnace in a ((N2 (95%) + H2S (5%)) atmosphere at an annealing temperature of 580° C to form void free Cu2ZnSnS4 thin films. METHOD Cu-Zn-Sn thin films of 0.29 – 0.44 µm thicknesses were synthesised using E
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