The preparation of Cu 2 ZnSnS 4 thin film solar cell based on oxygen containing precursor
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The preparation of Cu2ZnSnS4 thin film solar cell based on oxygen containing precursor Xinyu Li1, Shurong Wang1,* , Hua Liao1, Shuai Yang1, Xiang Li1, Tingbao Wang1, Jingjin Li1, Qiulian Li1, and Xin Liu1 1
Key Laboratory of Rural Energy Engineering in Yunnan Province, Yunnan Normal University, Kunming 650500, People’s Republic of China
Received: 3 August 2020
ABSTRACT
Accepted: 8 September 2020
In this paper, we reported a new method to fabricate Cu2ZnSnS4 (CZTS) thin film solar cells. Oxygen containing precursor thin films were deposited on the Mo-coated soda lime glass (SLG) by sputtering ZnO, SnO2 and Cu targets. For getting higher quality CZTS thin films, the effects of different annealing temperatures of 380 °C, 480 °C, 580 °C and 650 °C on CZTS films were systematically investigated. The results showed that the optimum annealing temperature was 580 °C. Through optimizing the sulfurization process, phase-pure CZTS thin films with compact and large grains were obtained. Composition analysis showed that O was not detected after sulfurizing process which indicated all of O was replaced by S. And due to the stability of SnO2, the loss of tin can be avoided. In addition, ZnO not only can provide zinc sources, but also can decrease the thickness of MoS2 as a barrier layer. Finally, CZTS solar cells based on sputtering oxides targets were obtained and the preliminary fabricated CZTS thin film solar cells had an efficiency of 5.08%, with an open-circuit voltage of 645 mV, a short-circuit current density of 21.74 mA/cm2 and a fill factor of 36.23%.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction In the past 20 years, thin film solar cells have emerged as an effective scheme to figure out the world’s energy crisis because of its clean and renewable characteristics. Currently, it is reported that the highest power conversion efficiency (PCE) of binary compound semiconductor CdTe and GaAs are 22.7% and 28.8% [1, 2], respectively. In addition, the PCE of quaternary compound semiconductor
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https://doi.org/10.1007/s10854-020-04465-6
Cu(In,Ga)Se2 (CIGS) reached 23.35% [3], which has also been commercialized in the world. In spite of this, the toxicity of Cd and rare contents of Ga, In, Te in the earth’s crust, which result in the cost of raw materials is very expensive, which limits the largescale commercial production. Kesterite CZTS solar cells have recently drawn a great attention as a promising candidate for sustainable thin film solar cell development, it is consisted of I2–II–IV–VI4 quaternary elements, which is derived from CIGS using
J Mater Sci: Mater Electron
Zn and Sn to replace In and Ga and has the similar crystal structure with CIGS. The important is each component of CZTS is abundant element in the earth and low toxicity [4]. From previous studies, CZTS semiconductor belongs to p-type semiconductor and has a large absorption coefficient approximately 104 cm-1 and a direct bandgap value of 1.45 eV, which is sui
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