Deposition of fine silicon carbide relics by electrostatic atomization of a polymeric precursor
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A solution of a polymeric precursor for silicon carbide (SiC) was subjected to electrostatic atomization in the cone-jet mode to spray droplets on a zirconia substrate. The resulting deposit was heated to 1300 °C to obtain SiC relics. Precursor and ceramic relics were characterized by microscopy. The size distribution of the droplet relics was studied at several flow rates of the solution to the electrostatic atomization chamber. The results show that by controlling the flow rate SiC relics approximately 5 m in diameter can be produced.
I. INTRODUCTION
Modern microengineering requires regular microstructures, which consist of small powder relics deposited using printing methods such as soft lithography1and direct ceramic ink-jet printing.2 However, at present these methods do not allow the preparation of ceramic relics of diameter
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