Design and Analysis of High Performance CMOS Temperature Sensor Using VCO
This paper presents a CMOS temperature sensor which is designed using self-bias differential voltage controlled ring oscillator at 180 nm TSMC CMOS technology to achieve low power. This paper focuses on design, simulation, and performance analysis of temp
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Abstract This paper presents a CMOS temperature sensor which is designed using self-bias differential voltage controlled ring oscillator at 180 nm TSMC CMOS technology to achieve low power. This paper focuses on design, simulation, and performance analysis of temperature sensor and its various components. In this used VCRO has full range voltage controllability along with a wide tuning range from 185 to 810 MHz, with free running frequency of 93 MHz. Power dissipation of voltage controlled ring oscillator at 1.8 V power supply is 438.91 µW. Different parameters like delay and power dissipation of individual blocks like CMOS temperature sensor component, voltage level shifter, counter and edge triggered D flip-flop are also calculated with respect to different power supply and threshold voltages. Power dissipation and delay of VCRO-based temperature sensor at 5 V power supply is 80.88 mW and 7.656 nS, respectively, and temperature range is from −175 to +165. Keywords Voltage-to-digital converter
VCO WSN ADC VLSI
1 Introduction Temperature does not depend on any material. It is physical quantity which we use in our daily routine. Because of its independent behavior it has intensive property. Temperature sensor nowadays are used in VLSI implementation in the RFID and
Kumkum Verma (&) S.K. Jaiswal ECE Department, Sangam University, Bhilwara, Rajasthan, India e-mail: [email protected] K.K. Verma ECE Department, Dr.R.M.L.Avadh University, Faizabad, UP, India Ronak Shirmal ECE Department, Geetanjali Institute of Technical Studies, Udaipur, Rajasthan, India © Springer Science+Business Media Singapore 2016 S.C. Satapathy et al. (eds.), Proceedings of the International Congress on Information and Communication Technology, Advances in Intelligent Systems and Computing 439, DOI 10.1007/978-981-10-0755-2_8
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wireless sensor network (WSN) application. On a single thin silicon wafer thousands of components are introduced [1–14]. So for the accuracy purpose importance of design of low voltage, a low-power circuit exists. The power consumed by batteries is high and supply voltage is comparatively low, demand of life time of the battery also takes place, all these factors show the requirement of low power system. The decreasing issue of power supply voltage is it stops the flow of signal in circuit. It creates problem for analog circuit design. Transistor characteristic also decreased because of low-voltage supply. The value of device characteristic decreases due to scaling down of CMOS technology. All the high-resolution CMOS temperature sensors, like band gap temperature sensor based on analog-to-digital (ADC) and temperature sensor using thermal diffusivity sensing have been reported. High resolution temperature sensor consumes large area and significant power, due to their complex structure conversion rate is low because of all these it is difficult to add high resolution temperature sensor into other system. BJT-based temperature sensor that accepts the voltage-to-digital convert
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