Design of Low-Profile Millimeter-Wave Substrate Integrated Waveguide Power Divider/Combiner
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Design of Low-Profile Millimeter-Wave Substrate Integrated Waveguide Power Divider/Combiner Kaijun Song & Yong Fan & Yonghong Zhang
Received: 14 November 2006 / Accepted: 17 April 2007 / Published online: 1 May 2007 # Springer Science + Business Media, LLC 2007
Abstract A low-profile millimeter-wave substrate integrated waveguide (SIW) power divider/combiner is presented in this paper. The simplified model of this compact SIW power dividing/combining structure has been developed. Analysis based on equivalent circuits gives the design formula for perfect power dividing/combining. In order to verify the validity of the design method, a four-way SIW power divider/combiner circuit operating at Ka band is designed, fabricated and measured. Good agreement between simulated and measured results is found for the proposed passive power divider/combiner. Experiments on the four-way passive divider/combiner back-to-back design demonstrate a minimum overall insertion loss of 1.5 dB at 31.1 GHz, corresponding to a power-combining efficiency of 84%. The measured 10-dB return loss bandwidth is demonstrated to be 2.2 GHz, and its 0.5-dB bandwidth was 2 GHz. Keywords Substrate integrated waveguide (SIW) . Power divider . Combiner . Millimeter wave . Radial cavity . Current probe . Low profile
1 Introduction With the rapid advancements of military and commercial communications systems in recent years, the demand for power dividers/combiners has greatly increased. However, conventional technologies for designing high-quality passive power dividers/combiners, including a metal waveguide or microstrip line, are either too expensive or not able to provide required performances. New technologies of passive components always stimulate the design of microwave devices including power dividers/combiners. Recently, a convenient and interesting planar integration scheme called substrate integrated waveguide (SIW) has already attracted much interest [1, 2]. The SIW is synthesized in a planar substrate with arrays of metallic via, and can be fabricated by standard printed circuit K. Song (*) : Y. Fan : Y. Zhang School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People’s Republic of China e-mail: [email protected]
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Int J Infrared Milli Waves (2007) 28:473–478
boards (PCBs) or the low temperature cofired ceramics (LTCC) process. Compared with microstrip-like structures, it has higher Q-factor. In view of the above advantages, it is an appropriate choice for realizing components in microwave and millimeter wave integrated circuits [3, 4]. The field distribution in an SIW is similar to that in a conventional metallic waveguide, and the transitions of the SIW are designed on the same substrate, thus eliminating any mechanical assembling. Therefore, it is possible to design microwave and millimeter wave components with good performance using the SIW technique. A number of integrated components have been developed including numerous transitions, filters, and oscillators [4–
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