Development of organic resistive memory for flexible electronics
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Development of organic resistive memory for flexible electronics Nathalie Frolet1, Micaël Charbonneau2, Raluca Tiron2, Julien Buckley2, Denis Mariolle2, Delphine Boutry1, Romain Coppard1 and Barbara De Salvo2 1 CEA-LITEN LCEI 17 rue des Martyrs, 38054 Grenoble Cedex 9, France 2 CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France ABSTRACT In this paper, we have performed further investigations and deepened our understanding of Polymer Resistive Random Access Memory devices (PoRRAM) on silicon substrate. Organic thin films based on blend of fullerene (C60) molecules and poly-methyl-methacrylate resist (PMMA) were analyzed from a material and electrical point of views. We have enlightened first the necessity of thermal treatment on the nano-composite layer in order to obtain memory effect in the device. Indeed from I-V measurements, only devices that had a thermal activation exhibited the hysteresis phenomenon, characteristic of the memory effect. The impact of thermal annealing has been investigated by morphological analysis (AFM and confocal microscopy) before and after thermal treatment. This process step induced the C60 molecules aggregation in the polymer matrix. The morphological study of these aggregates coupled with electrical measurements allowed us to determine the influence of aggregation on the electrical behavior. Due to their flexibility, this organic memories based on PMMA:C60 nanocomposites show a strong potential for an adaptation on plastic substrate. INTRODUCTION Currently, manufacturers of printed RFID circuits on plastic use Read Only Memory (ROM) or One-Time Programmable (OTP) memory for data storage. The development of nonvolatile organic memory and reprogrammable devices on plastic open many opportunities in the field of RFID, but also in other integrated applications such as sensors or display. Recent developments in organic electronic have focus on polymer resistive memories (PoRRAM) [1-3]. These materials offer important advantages in terms of fabrication methodology and properties tunability: a wide versatility in chemical composition allowing a large tailoring of electrical behavior, simple deposition methods, high flexibility and low cost. Resistive polymer memory in MIM (Metal-Insulator-Metal) structure [4] has been largely studied in literature, the insulator being implemented with macro-polymers, copolymers or nanocomposites with metallic nanoparticules or small organic molecule inclusions. The blends “molecules/polymer” have been also largely investigated; C60 fullerenes or PCBM (phenyl-C61-butyric-acid-methyl-ester) have been mixed in polystyrene (PS), poly(N-vinylcarbazole) (PVK) or poly-methyl-methacrylate resist (PMMA) [5-8]. We reported recently promising results on resistive organic memories with “fullerenes C60/PMMA” blend deposited on a rigid silicon substrate (Si/SiO2) [9,10]. In the present paper, we have reported a detailed study on the organic layer processing requirements in order to adapt those devices for their transfer on flexible substrate.
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