Development of Variable Temperature Scanning Microwave Microscope for High Throughput Materials Characterization
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0894-LL02-03.1
Development of Variable Temperature Scanning Microwave Microscope for High Throughput Materials Characterization Noriaki Okazaki1, Sohei Okazaki2, Ryota Takahashi3, Makoto Murakami4, Parhat Ahmet1, Nobuyuki Kakiuchi5, Hitoshi Furusho5, Taito Nishino5, Yutaka Furubayashi6, Tomoteru Fukumura7, Yuji Mastumoto3, Masashi Kawasaki7, Toyohiro Chikyow1, Hideomi Koinuma 8 and Tetsuya Hasegawa2,6 1 Nanomaterials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. 2 Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan. 3 Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan. 4 Department of Physics, University of Maryland, College Park, MD 20742-3511, U.S.A. 5 Nissan Chemical Industries, LTD., 722-1, Tsuboi-cho, Funabashi-shi, Chiba 274-8507, Japan. 6 Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan. 7 Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan. 8 National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. ABSTRACT We developed a variable-temperature scanning microwave microscope (VT-SµM) that can perform high-throughput materials characterization in the temperature range between 4K and room temperature. As a sensor probe we used a high-Q coaxial cavity resonator, which was mounted on the low-temperature stage to allow variable-temperature measurements. We carried out systematic studies on the thermal degradation of the conducting polymers using the combinatorial libraries of polyaniline and polythiophene thin films, which showed rapid decrease of conductivity above the heating temperatures of 300°C and 250°C, respectively. The low-temperature performance of the VT-SµM was demonstrated by the measurement of composition-spread Nd1-xSrxMnO3 thin film, for which we succeeded in detecting the clear metal-insulator transition at 100K. We also propose a simple and easy method for the quantitative analysis of conductive thin films, by using the standard composition-spread thin films of Ti1-xNbxO2.
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INTRODUCTION The Scanning Microwave microscope (SµM) has been attracting much attention as a high-throughput electric-property screening tool in the combinatorial materials science and technology [1-8]. The SµM can evaluate surface local electric properties such as linear/nonlinear dielectric constant, dielectric loss and conductivity, using evanescent microwave emitted from the probe tip attached to the resonator. We developed a SµM by using either a lumped-constant (LC) resonator or a coaxial cavity resonator as a sensor probe. By using the LC resonator probe, we succeeded in mapping out dielectric constant for various composition-spread thin films, such as (Ba,Sr)TiO3, ternary HfO2-Y2O3-Al2O3 and Li(Nb,Ta)O3 from the measurement of resonance frequency shift [3,6,7]. On the other hand, the cavity resonator has higher qu
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