Development of Scanning Microwave Microscope for High-Throughput Characterization of Combinatorial Dielectric Thin Film
- PDF / 79,373 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 95 Downloads / 214 Views
Development of Scanning Microwave Microscope for High-Throughput Characterization of Combinatorial Dielectric Thin Film Noriaki Okazaki,1 Parhat Ahmet,1 Toyohiro Chikyow,1 Hiroyuki Odagawa,2 Yasuo Cho,2 Tomoteru Fukumura,1,3 Masashi Kawasaki,1,3 Makoto Ohtani,4 Hideomi Koinuma1,5,6 and Tetsuya Hasegawa1,6 1 National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan 2 Research Institute of Electrical Communication and 3Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan 4 Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan 5 Frontier Collaborative Research Center and 6Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan ABSTRACT A scanning microwave microscope (SµM) for high-throughput characterization of combinatorial dielectric materials has been developed using a lumped constant resonator probe. The probe consists of a microwave oscillator module equipped with a thin conducting needle and an outer conductor ring, which detects the dielectric constant of the sample just beneath the needle as a frequency shift of the resonator. The quantitative analysis of the dielectric constant for the bulk and the thin-film samples was carried out based on the measurement of gap-length dependence of the frequency shift. The analysis method was successfully applied to the characterization of composition-spread BaxSr1-xTiO3 thin film sample. The evaluation of far-field contribution to the frequency shift was found to be crucial for the accurate determination of dielectric constant especially in the characterization of combinatorial thin films. INTRODUCTION High throughput characterization of electric properties such as dielectric constant and loss tangent is highly required for the combinatorial design of dielectric materials. Especially, quantitative evaluation of these properties in the rf / microwave frequency regions has been increasing its importance in the field of communication and information technologies. For this purpose, the scanning microwave microscope (SµM) has been intensively studied in recent years. The implementation of SµM designed so far is formally divided into two categories according to the style of resonator probe. One is the coaxial cavity resonator probe [1-7] and the other is the LC (inductance and capacitance) lumped-constant resonator probe [8-15]. The measurement principle of the (linear) dielectric constant is nearly the same for the two systems, in which the dielectric constant beneath the probe needle is detected as a shift of the resonance frequency. Advantage of the former resonator is its stability and high quality factor. Quantitative measurements of dielectric constant, loss tangent and surface conductivity have been made and its application to the characterization of combinatorial library samples has been reported [1-7]. The latter system has so far been used most
Data Loading...
