The Development of Scanning Microwave Microscope for High-Throughput Characterization of Dielectric and Conducting Mater
- PDF / 162,844 Bytes
- 6 Pages / 595 x 842 pts (A4) Page_size
- 94 Downloads / 176 Views
JJ9.21.1
The Development of Scanning Microwave Microscope for High-Throughput Characterization of Dielectric and Conducting Materials at Low Temperatures Sohei Okazaki1, Noriaki Okazaki2, Hidetaka Sugaya1, Xiaoru Zhao2, Ken Hasegawa3, Parhat Ahmet2, Toyohiro Chikyow2, Jun Nishimura4, Tomoteru Fukumura4, Masashi Kawasaki4, Makoto Murakami3, Yuji Mastumoto3, Hideomi Koinuma2, 3 and Tetsuya Hasegawa1, 2, 3, 5 1 Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan. 2
Advanced Materials Laboratories, National Institute for Materials Science,
1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. 3 Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan. 4
Institute for Materials Research, Tohoku University,
2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan. 5 Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan. ABSTRACT We developed a scanning microwave microscope (SµM) designed for characterizing local electric properties at low temperatures. A high-Q λ/4coaxial cavity was used as a sensor probe, which can detect the change of quality factor due to the tip-sample interaction with enough accuracy. From the measurements of combinatorial samples, it was demonstrated that this SµM system has enough performance for high-throughput characterization of sample conductance under variable temperature conditions.
INTRODUCTION The scanning microwave microscope (SµM) is a member of SPM family that can map out point-to-point variation of the surface electric properties, such as linear/nonlinear dielectric constant, dielectric loss and conductance, using evanescent microwave. The SµM is quite advantageous for the high-throughput combinatorial materials exploration, since it allows us to characterize local electric properties, in a non-destructive way, without any prerequisite sample processing. The implementation of SµM designed so far can be divided into two categories, according to the design of resonator probe. One uses the coaxial cavity resonator probe [1-5] and
JJ9.21.2
the other is based on the LC (inductance and capacitance) lumped-constant resonator circuit [6-10]. In both cases, the dielectric constant beneath the probe needle is detected as a shift of the resonance frequency. We have recently developed a SµM system using the LC resonator, which has been successfully applied to the imaging of dielectric constant for the composition-spread thin films [7-10]. However, the instrument has an essential difficulty in measuring dielectric loss and conductance because of relatively low Q value of the resonator circuit. In order to overcome the difficulty, we have developed a new SµM system employing the coaxial cavity resonator as a sensor probe. The system is designed, taking low-temperature operation into account, to enable rapid construction of electric phase diagrams at low temperatures. In this paper, we describe the detailed implementation of the low-tem
Data Loading...
