Diamond Nanopit Arrays Fabricated by Room-Temperature Nanoimprinting using Diamond Molds
- PDF / 1,760,667 Bytes
- 6 Pages / 432 x 648 pts Page_size
- 0 Downloads / 167 Views
Diamond Nanopit Arrays Fabricated by Room-Temperature Nanoimprinting using Diamond Molds Shuji Kiyohara1, Masaya Kumagai1, Yoshio Taguchi2, Yoshinari Sugiyama2, Yukiko Omata2, Yuichi Kurashima3 and Hirofumi Takikawa4 1
Advanced Faculty of Electric and Control System Engineering Course, Maizuru National College of Technology, 234 Aza Shiroya, Maizuru, Kyoto 625-8511, Japan 2 Application and Technical Section, ELIONIX INC., 3-7-6 Motoyokoyama, Hachioji, Tokyo 192-0063, Japan 3 Department of Mechanical System Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan 4 Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan ABSTRACT We have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond nanodot mold. We have proposed the use of polysiloxane as an electron beam (EB) mask and RT-imprint resist materials. The diamond molds of cylinder dot using the RT-NIL process were fabricated with polysiloxane oxide mask in EB lithography technology. The dot in minimum diameter is 500 nm. The pitch between the dots is 2 μm, and dot has a height of about 600 nm. It was found that the optimum imprinting conditions for the RT-NIL : time from spin-coating to imprinting t1 of 1 min , pressure time t2 of 5 min, imprinting pressure P of 0.5 MPa. The imprint depth obtained after the press under their conditions was 500 nm. We carried out the RT-NIL process for the fabrication of diamond nanopit arrays, using the diamond nanodot molds that we developed. The resulting diamond nanopit arrays with 500 nm-diameter and 200 nm-depth after the electron cyclotron resonance (ECR) oxygen ion beam etching were fabricated. The diameter of diamond nanopit arrays was in good agreement with that of the diamond nanodot mold. INTRODUCTION The diamond exhibits unique properties such as high hardness, high thermal conductivity, wide band-gap and negative electron affinity, and so it is expected to have various applications [1]. For example, it can be used not only for mechanical tools and optical instruments but also for semiconductor devices, electron emitters, micro-gears and patterned media [2-5]. Therefore, the nanopatterning technique of a diamond is essential to the fabrication of diamond-based micro/nano electronic, optical and mechanical devices. We have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond mold. The diamond mold has a lifetime about 100 times longer than that of silicon (Si) mold using a conventional NIL process [6,7]. The diamond mold has been fabricated by radio frequency (RF) oxygen plasma with Bi4Ti3O12 octylate mask in the electron beam (EB) lithography technology [8]. However, the maximum etching selectivity of Bi4Ti3O12 octylate films against diamond film was 3, which is very small. To overcome this problem, we have proposed the use
Data Loading...
