Differences between Sputtering Methods in the Formation of Amorphous Magnetic Alloy Films
- PDF / 264,403 Bytes
- 4 Pages / 420.48 x 639 pts Page_size
- 65 Downloads / 186 Views
DIFFERENCES BETWEEN SPUTTERING METHODS IN THE FORMATION OF AMORPHOUS MAGNETIC ALLOY FILMS Y. Hoshi* and M. Naoe** * Tokyo Institute of Polytechnics, Atsugi-shi, Kanagawa-ken 243-02 Japan ** Tokyo Institute of Technology, Meguro-ku, Tokyo 152 Japan
ABSTRACT Fe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crysand promotes the formation of the films with amorphous structures. tallites This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.
INTRODUCTION Many kinds of amorphous magnetic thin films have been produced by means 6 of various kinds of sputtering techniquesl- ). But different sputtering methods have different deposition conditions for the formation of the amorphous films. However, the differences between the sputtering methods in the formaunclear. In this work, at first tion of the amorphous magnetic films are still we deposited Fe-Si and Co-Ta amorphous magnetic thin films by using various sputtering apparatuses (a conventional rf diode, triode and tetrode sputtering apparatus, a dc Targets Facing type sputtering (dc TF sputtering) apparatus and dual ion beam sputtering (DIB sputtering) apparatus) and investigated the differences between the sputtering methods in the deposition of the amorphous films. Secondly, in order to clarify the effect of ion bombardment to the film surface during the film deposition, Co-Ta and Co-Zr films were deposited under the codition of various amount of ion bombardment by using a DIB sputtering apparatus. As the result, it becomes clear that the ion bombardment takes an important role for the formation of the films with amorphous structures.
EXPERIMENTAL PROCEDURE Figure 1 shows the schematic diagrams of the sputtering apparatuses used in this work. Composite targets constructed with Fe plate and Si chips, Co and (c) and (d) were (b), Ta plates, and Co and Zr plates as shown in Fig.2 (a), used for the film preparation. The film composition was controlled by adjusting the area ratio of the each plates. Table I shows the typical sputtering conditions to deposit the amorphous films by various sputtering apparatuses. Co-Ta and Co-Zr films were deposited by using the DIB sputtering apparatus to investigate the effect of Ar ion bombardment on the film surface during sputtering on the
Data Loading...
