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DIRECT DEPOSITION REACTIONS BETWEEN NICKEL AND SILICON SUBSTRATES Lin Zhang and Douglas G. Ivey, Department of Mining, Metallurgical, and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2136 ABSTRACT Silicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto oriented Si wafers, which were heated up to 300°C, by e-beam

evaporation under a vacuum of

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