Direct writing of ZrO 2 and TiO 2 nanostructures by ArF lithography
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1247-C10-07
Direct writing of ZrO2 and TiO2 nanostructures by ArF lithography Hassan Ridaoui, Ali Dirani, Fernand Wieder, Olivier Soppera Institut de Sciences des Matériaux de Mulhouse (IS2M), CNRS LRC 7228, 15 rue Jean Starcky BP 2488, 68057 MULHOUSE Cedex, France Contact: [email protected]
ABSTRACT We achieved the preparation of nanostructures based on negative tone inorganic resists by DUV lithography (193 nm). This entails the preparation of a complex of a transition metal by reaction between the metal alkoxide and a suitable ligand. The reaction was carried out in a solvent. Then, a partial hydrolysis of the complex allowed forming metal-oxides inorganic chains by condensation with good film-forming and photopatterning properties. This step corresponds to the synthesis of multifunctional oligomers that can be crosslinked by DUV irradiation. We obtained well-defined patterns exhibiting low rugosity with width down to 75 nm. An achromatic interferometer based on an ArF excimer laser was used to write the nanostructures. The sensitivity of the resin at 193 nm is in the order of magnitude of organic photoresists used in the microelectronics industry. The photoinduced processes were studied with care in order to state the physico-chemical phenomena occurring upon DUV-irradiation. FTIR, XPS and XRD were used for characterizing the material structure after irradiation and thermal treatment. Nanostructures were studied by AFM. The main interest of this resist is that after irradiation, the material is mainly inorganic. It can even be totally mineralized through a subsequent pyrolysis procedure. The process is compatible with a wide range of chemicals (ZrO2, TiO2 …). Using lithographic route, it is possible to obtain such nanostructures on relatively wide surfaces. With this new process, we are targeting applications in microelectronics, optics, photonics, photocatalysis, photovoltaic… INTRODUCTION The critical issue in nanoscience and nanotechnology relies on nanofabrication, e.g. the production of structures with typical dimension in the 1 to 100 nm range with engineered physical and chemical properties. Controlled patterning of nanostructured materials on surfaces has become increasingly important because of the ever-decreasing dimensions of various devices, including those used in electronics, optics, photonics, biology, electrochemistry, and electromechanics.[1,2] In this context, advances in both materials and processes are needed and different nano-fabrication techniques have been reported in the literature.[3]
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ArF lithography (193 nm) is the current state technique widely used in microelectronics industry. The interferometric configuration allows writing nanoscale structures on relatively wide areas. This parallel process is thus much more rapid than e-beam lithograph
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