Effect of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substra
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of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substrates D. L. Alfimovaa, M. L. Luninaa, L. S. Lunina, b, *, O. S. Pashchenkoa, A. S. Pashchenkoa, and A. N. Yatsenkob a
Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, 344006 Russia b Platov South-Russian State Polytechnic University, Novocherkassk, 346428 Russia *e-mail: [email protected] Received December 12, 2019; revised January 20, 2020; accepted January 25, 2020
Abstract—The effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates in a temperature gradient field is studied. The optimal parameters of the growth process of AlGaInSbBi(InSb) epitaxial layers with high structural perfection and minimum roughness are s revealed: 0.05 < xBi < 0.2 mole fraction, temperature gradient 10 K/cm ≤ G ≤ 30 K/cm, liquid-zone thickness 60 ≤ l ≤ 100 μm, and the temperature range 623 K ≤ Т ≤ 823 K. Keywords: AlGaInSbBi epitaxial layers, indium antimonide, temperature gradient, elastic stresses, bismuth, crystal-lattice period, diffraction-reflection curve, roughness, surface, structural perfection DOI: 10.1134/S1027451020040217
INTRODUCTION Multicomponent solid solutions based on bismuthcontaining А3В5 compounds are of interest as materials for photodetecting and light-emission devices operating in the visible and infrared (IR) spectral ranges [1, 2]. In particular, AlGaInSbBi solid solutions belong to these materials. The application of heterostructures based on AlGaInSbBi solid solutions for IR photodetectors makes high demands to their structural perfection. The use of isovalent components such as bismuth in heterostructures, which actively affect the band structure of epitaxial layers, opens up great opportunities for the control of the luminescence spectrum and structural perfection [3–5]. The introduction of bismuth into the crystal lattice allows a partial reduction in the inconsistencies between lattice periods of the epitaxial layer and the substrate and a decrease in the band gap [6–8]. On the other hand, its introduction facilitates an increase in the internal stresses responsible for the extension of areas of the existence of the solid solutions [9]. The aim of this work is to study the effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates. EXPERIMENTAL Bismuth-containing heterostructures were grown by temperature-gradient zone recrystallization (TGZR) in
a closed system in a hydrogen flow purified by diffusion through palladium [1]. A solution-melt of pure elements (Sb(SU-000), In(IN-000), Ga(GL-000), Bi(VI-000), Al(AL-000)) was used as the liquid zone. The sample weight was calculated by a procedure described previously [2] with regard to the molar weights of the elementary components. All materials, except gallium, were chemically treated in a HNO3 : H2O (1 : 1) mixture, washed in distilled water, and dried in a thermostat at 333–343 K. Single-cr
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