Effect of molar concentration of CuCl 2 on the characteristics of Cu 2 S film
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Effect of molar concentration of CuCl2 on the characteristics of Cu2S film Raid A. Ismail1 · Abdul‑Majeed E. Al‑Samarai2 · Ali M. Muhammed Ali3 Received: 19 May 2020 / Accepted: 12 October 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract u2S film In this work, the influence of molar concentration of C uCl2 on copper sulfide C synthesized by chemical bath deposition and on the performance of p-Cu2S/p-Si heterojunction photodetector was studied. The effect of copper chloride concentration on the structural, optical properties and electrical properties of C u2S film was investigated. The optical studies show that the optical energy gap varied from 2.68 to 2.8 eV as the concentration varied from 0.06 to 0.15 M. X-ray diffraction XRD results confirm that the deposition films having of monoclinic chalcocite phase. Scanning electron microscope SEM investigation illustrate the formation of nanostructured Cu2S film with particle size ranged from 50 to80 nm depending on the copper chloride concentration. Two Raman peaks were observed located at 265 and 470 cm−1 assigned to the Cu–S bond vibration and vibrational stretching mode, respectively. The mobility of charge carriers in the film and the electrical conductivity of the film were investigated as a function of copper chloride concentration. Dark and illuminated I-V characteristics of p-Cu2S/p-Si heterojunction HJ photodetectors were measured at room temperature. The best rectification was for heterojunction prepared at 0.13 M CuCl2. The maximum responsivity of the photodetector was about 0.67A/W at 450 nm for photodetector prepared at 0.13 M. Keywords CBD · Cu2S · CuCl2 concentration · Photodetector
1 Introduction Copper sulphide (Cu2S) film has drawn potential attention due to its excellent optical and electrical properties which enable it to be used for many significant technological applications (Nair and Nair 1991). Cu2S is p-type semiconductor with energy gap ranged between 1.5 and 2.6 eV (Grozdanov and Najdoski 1995) depending on the preparation method and its phase. C u2S film has been used for many applications, for example, gas sensor (Sagade * Raid A. Ismail [email protected] 1
Department of Applied Science, University of Technology, Baghdad, Iraq
2
Department of Physics, College of Education, University of Tikrit, Tikrit, Iraq
3
General Directorate of Education in Kirkuk, Ministry of Education, Kirkuk, Iraq
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and Sharma 2008), solar cell, electrodes, photocatalyst, photothermal conversion, optical filters, and optoelectronic devises (Kim et al. 2017). Copper sulfide films have been deposited by various methods such as spray pyrolysis (Isac et al. 2007; Nho et al. 2012), successive ionic layer absorption, photochemical deposition (Podder et al. 2005), electrodeposition (Wu et al. 2008), and chemical bath deposition CBD (Singh et al. 2013), and laser deposition. One of the most common methods used for C u2S film deposition is CBD (K
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