Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects
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EFFECTIVENESS AND RELIABILITY OF METAL DIFFUSION BARRIERS FOR COPPER INTERCONNECTS G. Bai, S.Wittenbrock, V. Ochoa, R. Villasol, C. Chiang, T. Marieb, D. Gardner, C. Mu, D. Fraser, and M. Bohr Intel Corporation, Santa Clara, CA 95052. ABSTRACT Cu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO 2 and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by "micro-defects" in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm. INTRODUCTION Cu diffuses quickly in both Si0 2 and Si at processing temperatures of
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