Effects of Ni doping on the structural, photoelectric, and antibacterial properties of ZnCo 2 O 4 thin films
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O R I G I N A L P A P E R : S O L - G E L A N D H Y B R I D M A T E R I A L S F O R O P T I CA L , PHOTONIC AND OPTOELECTRONIC APPLICATIONS
Effects of Ni doping on the structural, photoelectric, and antibacterial properties of ZnCo2O4 thin films Kao-Pin Hwang1 Hung-Chih Lin2,3 Yu-Zhan Su4 Wan-Ping Wu4 Ruei-Sung Yu4,5 ●
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Received: 1 March 2020 / Accepted: 25 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract This study addresses improving the electrical properties and demonstrating the antibacterial capability of spinel ZnCo2O4 films. We used sol–gel and spin-coating techniques to prepare samples and analyzed their crystal structures, microstructures, as well as their photoelectric and antibacterial properties, in relation to Ni doping. Single-phase spinel oxide is maintained in all of the Zn(Co1-xNix)2O4 films. The replacement of cobalt by nickel causes a decrease in the average grain size and surface roughness. Both the grain size and the surface roughness affect the optical properties of the film translucence. The transmittances of all films at a wavelength of 600 nm is ~31.3–48.6%. The characteristic absorption peak of the photonexcited electron is about 400 nm. A higher doping content ratio (Nix = 0.15–0.30) causes the absorption characteristic peak to gradually disappear. The direct energy gap of all spinel oxides ranges from 2.45 to 2.57 eV. All films are p-type semiconductors, and nickel can replace cobalt to increase the carrier concentration, resulting in a decrease in the resistivity of Zn(Co1-xNix)2O4 from 312.5 Ω-cm (Nix = 0) to 15.8 Ω-cm (Nix = 0.30). The antibacterial rate for Escherichia coli and Staphylococcus aureus associated of the material can reach more than 99.9%, and no photocatalysis is necessary. Therefore, Ni-doped ZnCo2O4 possesses excellent properties for potential applications. Graphical Abstract
Raw cheemical
Precursor so oluon
Sp pin coang
Anne ealing
Contro ol Sample e (Ni-doped ZnCo2O4 oated film co on quaartz )
Electrrical properres improvved
* Ruei-Sung Yu [email protected] 1
School of Medicine, China Medical University Hospital and Children Hospital, China Medical University, Taichung 40402, Taiwan
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Department of Neonatology, China Medical University Children’s Hospital, Taichung, Taiwan
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Go ood anbactterial prope eres
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Asia University Hospital, Asia University, Taichung, Taiwan
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Department of Computer Science and Information Engineering, Asia University, 500 Lioufeng Rd., Wufeng, Taichung 41354, Taiwan
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Department of Medical Research, China Medical University Hospital, China Medical University, Taichung 40402, Taiwan
Journal of Sol-Gel Science and Technology
Keywords
ZnCo2O4 Sol–gel Thin films Ni doping Spinel structure Photoelectric properties ●
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Highlights Ni is doped in the ZnCo2O4 and influences the material characteristics. ● Ni doping causes a decrease in the average grain size and surface roughness. ● Ni replaces Co which enhances ho
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