Effects of plasma power on the properties of low-k polymerlike organic thin films deposited by plasma-enhanced chemical
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Effects of plasma power on the properties of low-k polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor Jongryang Joo Department of Physics, Institute of Basic Science, and Department of Vacuum Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Yong Chun Quan and Donggeun Junga) Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea (Received 2 August 1999; accepted 13 October 1999)
Effects of plasma power on the properties of polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor were studied. As the plasma power was increased from 5 to 60 W, the relative dielectric constant increased from 2.53 to 2.85. The film deposited at higher plasma power showed higher thermal stability. The film deposited at 60 W was stable up to 400 °C. All the films were insulating under applied field 艋1 MV/cm. I. INTRODUCTION
Recently, there has been much interest in low dielectric constant (low-k) thin films with the relative dielectric constant k 艋 3.0 due to their application as interlayer dielectrics for multilevel metallization of ultra large scale integrated (ULSI) semiconductor devices.1 High thermal stability (艌 450 °C) as well as low k-values are two most important requirements for the interlayer dielectrics. Due to low k-values and relatively high thermal stability of polymers, thin films of polymers were considered as possible candidates for low-k interlayer dielectrics. Chemical vapor deposition (CVD) is an attractive deposition method of polymer thin films due to the easy integration to the vacuum processes of semiconductor manufacturing, and many kinds of polymer thin films have been deposited by various CVD techniques.2–5 Among many CVD methods, plasma-enhanced chemical vapor deposition (PECVD) can be considered as a promising mass production technique, since PECVD can deposit thin films of polymers from organic precursors without halogen species, which can be incorporated into the film during the deposition and damage the nearby materials such as metals. Polymers synthesized by plasma is quite different from those synthesized chemically.6 They have highly cross-linked structures of random bonding environments. Since structures of thin films deposited by PECVD from organic precursors are not clearly understood, it was suggested that the films be referred to as “polymerlike organic thin films” (POTFs) rather than polymer thin films.7 PECVD of POTFs using an organic precursor without any halogen species for a low-k material was reported by Endo and Tatsumi.5 However, they a)
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J. Mater. Res., Vol. 15, No. 1, Jan 2000 Downloaded: 14 Mar 2015
investigated only the effect of benzene rings incorporated into the film from the toluene precursor on the properties of the deposited film. Variatio
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