Electrical properties of charging effect in Au nanoparticle memory device
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1207-N10-75
Electrical properties of charging effect in Au nanoparticle memory device Sung Mok Jung1, Hyung-Jun Kim1, Bong-Jin Kim1, Il-Seo2, Tae-Sik Yoon2, Yong-Sang Kim2, and Hyun Ho Lee1* 1 Dept. of Chemical Engineering, Myongji University, Yongin, Cheoin-Gu, 449-728, Korea 2 Dept. of Nano Science & Engineering, Myongji University, Yongin, Cheoin-Gu, 449-728, Korea ABSTRACT Semiconductors or metal nanoparticles (NPs) using their monolayer bindings with selfassembly chemicals are an attractive topic for device researchers. Electrical performance of such structures can be investigated for a particular application, such as memory device. Currently, Au NPs has been reported to show a substantial potential in the memory applications. In this study, Au NP and gluing layer were fabricated through a new method of monolayer formation of a chemical bonding or gluing. In this study, a new NPs memory system was fabricated by using organic semiconductor, i.e., pentacene as the active layer, evaporated Au as electrode, SiO 2 as the gate insulator layer on silicon wafer. In addition, Au NPs coated with binding chemicals were used as charge storage elements on an APTES (3-amino-propyltriethoxysilane) as a gluing layer. In order to investigate chemical binding of Au NP to the gate insulator layer, GPTMS (3-glycidoxypropyltrimethoxysilane) were coated on the Au NPs. As a result of that, a layer of gold nanoparticles has been incorporated into a metal-pentacene-insulator-semiconductor (MPIS) structure. The MPIS device with the Au NP exhibited a hysteresis in its capacitance versus voltage analysis. Charge storage in the layer of nanoparticles is thought to be responsible for this effect. INTRODUCTION It has been currently investigated with nanoparticles that memory effects were realized in capacitor devices [1,2]. These organic memory devices are considered as a new paradigm of electronic devices. In addition, they can be applicable to a sensor system. The technologies about organic memory device are in an early stage of understanding of mechanism, controllability of electrical properties, and its applicability for a practical use. In this study, we investigated a new method of binding gold (Au) nanoparticles (NPs) on SiO 2 layer to form a metal-pentaceneinsulator-semiconductor (MPIS) structure as a capacitor. In the previously reported literature, the binding of Au NPs was accomplished with citrate coating on the Au NPs and the dielectric SiO 2 layer was coated with APTES (3-amino-propyltriethoxysilane). Recently, a simple and strong binding method for PDMS (Polydimethylsiloxane) structure was developed by using amide bond between amine group of APTES and epoxy group of GPTMS (3-glycidoxypropyltrimethoxysilane) [3]. In this study, to accomplish the strong binding of Au NPs on the modified SiO 2 layer, Au NPs were coated with GPTMS and SiO 2 surface, the surface to be bound with the GPTMS-coated Au NPs, was coated by APTES. The monolayer bound Au NPs are expected to show a charging effect to be a source of flatband voltage shift i
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