Electrical Response of a Multiferroic Composite Semiconductor Fiber Under a Local Magnetic Field
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ISSN 1860-2134
Electrical Response of a Multiferroic Composite Semiconductor Fiber Under a Local Magnetic Field Chao Liang1
Chunli Zhang1
Weiqiu Chen1
Jiashi Yang2
1
( Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, China) (2 Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0526, USA)
Received 19 November 2019; revision received 18 February 2020; Accepted 18 March 2020; published online 16 April 2020 c The Chinese Society of Theoretical and Applied Mechanics 2020
ABSTRACT We study the electrical response of a multiferroic composite semiconductor fiber consisting of a piezoelectric semiconductor layer and two piezomagnetic layers under a transverse magnetic field applied locally to a finite part of the fiber. The phenomenological theory of piezomagnetic-piezoelectric semiconductors is employed. A one-dimensional model is derived for magnetically induced extension of the fiber. For open-circuit boundary conditions at the two ends of the fiber, an analytical solution is obtained from the model linearized for small carrier perturbations. The solution shows a local electric polarization and a pair of local electric potential barrier-well. When the two ends of the fiber are under a voltage, a nonlinear numerical solution shows that the potential barrier and well forbid the passage of currents when the voltage is low. The results have potential applications in piezotronic devices when magnetic fields are involved for manipulating the devices or sensing and transduction.
KEY WORDS Piezomagnetic, Piezoelectric, Semiconductor, Piezotronic effect
1. Introduction Recently, the third-generation semiconductors such as GaN, ZnO and MoS2 [1], which are also called piezoelectric semiconductors (PSs), have received much attention in the fields of science and technology due to the coexistence of piezoelectricity and semiconducting properties in them. The multifield coupling behavior of deformation-polarization-carrier makes them surpass all traditional semiconductors without piezoelectricity. One can use stress-/strain-induced piezopotential to control or enhance the performance of PS devices. This leads to the formation of new research areas called piezotronics and piezophototronics [2] in recent years. Piezoelectric semiconductors also have applications in sensors, electro- and photochemical applications, optoelectronics, nanogenerators, etc. In piezoelectric semiconductors, mechanical fields interact with holes-electrons through the piezoelectrically produced electric field. If a piezomagnetic element is incorporated into a piezoelectric semiconductor structure, the resulting composite structure exhibits both piezomagnetic and piezoelectric couplings and supports semiconduction as well. Such a structure deforms under a magnetic field due to piezomagnetic coupling, the deformation then produces electric polarization and field through piezoelectric coupling, and the electric field acts o
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