Epitaxial Growth of 2 inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD
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Epitaxial Growth of 2 inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Jiliang Zhu, Yi Chen, Yusuke Mukai, Akira Shoji, Taro Nishiguchi, Satoru Ohshima and S. Nishino Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan, tel:+81-75-724-7415,Fax:+81-75-724-7400, [email protected], "Zhu" , ABSTRACT
As a high mobility, wide bandgap semiconductor, 3C-SiC has great promise.
In this paper, we
examined to obtain 3C-SiC epilayer on Si substrates using hot-wall CVD furnace and report the use of hexamethyledisilane (HMDS) and propane as reaction gases to grow uniform thickness on 2 inch (100), (111), (110) and (211) orientation of Si substrates. A horizontal atmospheric pressure CVD reactor was used. A reaction zone was specially designed. To obtain uniform thickness of the epilayer, inside of the suscceptor hole was intentionally tapered along flow direction as follows; inlet of the square hole is 13 mm x 60 mm and outlet of the hole is 7 mm x 60 mm, and laminar channel for changing the gas flow profile was managed. The susceptor was surrounded by graphite foam. Temperature of the suscepotor was measured at inside wall of the susceptor by optical pyrometer. H2 flow rate for etching was 3 slm. An initial carbonization procedure was performed using 0.9 sccm propane at 1250 oC for 2-3 minutes. During the growth of SiC at 1300 oC, the flow rate of HMDS was 0.75-1.2 sccm and the flow rate of propane was 0.1 – 0.5 sccm . The hydrogen carrier gas flow rate was 3-10 slm. Typical growth rate was 4.5 micron /h. Uniform thick 3C-SiC was obtained. The samples were examined using ultra violet light spectrometer and RHEED. INTRODUCTION Silicon carbide (SiC) is a wide-band gap semiconductor with potential applications for radiation resistant, high-power, high frequency, and high-temperature devices in power generation, automotive, aerospace, and petroleum industries. One of various polytypes , cubic silicon carbide(3C-SiC) is attractive owing to high electron mobility (1000 cm2/Vs) and high electron saturation velocity ( 2.7 × 107 cm s-1)[1,2].
These electrical properties are a great advantage in
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the development of high-speed electrical devices. Since it has been difficult to grow single 3C-SiC crystals by sublimation boule growth due to its property to be stably grown at relatively lower temperatures, hetero-epitaxial growth of 3C-SiC on Si substrate by chemical vapor deposition (CVD) has been investigated
[3-5]. Recently, an interest toward 3C-SiC is
increasing, because the development of the hetero-epitaxial growth of 3C-SiC on (100) Si substrate has realized the growth of free-standing (100) 3C-SiC crystals [5,6]. Homo-epitaxial growth of 3C-SiC on 3C-SiC substrate has also been carried out, and the investigation of the 3C-SiC based devices has been stimulated, e.g., a high channel mobility of MOSFET on (100) 3C-SiC has been reported [7]. The hot-wall CVD proposed for SiC epitaxy has been extensively employed among many grou
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