Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O 3 Layers on GaAs
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Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O3 Layers on GaAs Benjamin Meunier1, Lamis Louahadj2, David Le Bourdais3, Ludovic Largeau4, Guillaume Agnus3, Philippe Lecoeur3, Valérie Pillard3, Lucie Mazet1, Romain Bachelet1, Philippe Regreny1, Claude Botella1, Geneviève Grenet1, David Albertini5, Catherine Dubourdieu1, Brice Gautier5 and Guillaume Saint-Girons1 1
Ecole Centrale de Lyon, INL-CNRS, Ecully, France RIBER SA, Bezons, France 3 Université Paris-Sud, Institut d’Electronique Fondamentale, Orsay, France 4 LPN-CNRS, Marcoussis, France 5 INSA, INL-CNRS, Villeurbanne, France 2
ABSTRACT Ferroelectric epitaxial Pb(Zr,Ti)O3 (PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale thanks to surface Ti pre-treatment. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements. INTRODUCTION Functional oxides with perovskite structure present a variety of physical properties (ferroelectric, piezoelectric, ferromagnetism,…) that make them very attractive for applications in the micro-optoelectronic field. Combining such oxides in their crystalline form with silicon or III-V semiconductors would allow integrating these functionalities on platforms compatible with industrial applications, and would more generally provide solutions to define novel functionalities or devices based on the combination of the physical properties of oxides and semiconductors (low VT transistors, MEMS, non-volatile memories,…). Starting in the late 1990’s, it has been shown that MBE, combined with convenient interface engineering strategy, could be used for the epitaxial growth of SrTiO3 (STO) on Si1,2 and GaAs3. This has been followed closely by two demonstrations of integration of piezoelectric Pb(Zr,Ti)O3 (PZT) on STO/Si4. Demonstrating the integration of ferroelectric or piezoelectric thin layers on semiconductor substrates still remains a challenge, since the chemical reactivity of the semiconductor with oxygen imposes narrow growth windows for the oxide that reduces the room of manoeuvre for optimizing the growth process, and since macroscopic ferroelectric measurement are made difficult in a metal-oxide-semiconductor configuration due to the strong contribution of the semiconductor to the capacitance of the heterostrucure. Within the last two years, piezoelectric lead magnesium niobate-lead titanate (PMN-PT)5 and PZT6,7 layers have been integrated on Si using STO templates, and ferroelectricity has been evidenced in BTO layers integrated on Si8,9 and GaAs10,11 .
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Here, we report on the first demonstration of integration by epitaxy of PZT thin films on GaAs using STO/GaAs templates and a conducting La0.67Sr0.33MnO3 (LSMO) bottom electrode. PLD is used for PZT and LSM
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