Erratum to: Dislocation Mobilities in GaN from Molecular Dynamics Simulations-CORRIGENDUM
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CORRIGENDUM
Dislocation Mobilities in GaN from Molecular Dynamics Simulations– CORRIGENDUM
N. Scott Weingarten
doi: 10.1557/opl.2015.25, Published by Materials Research Society, 02 February 2015.
The original Figure 4 published in this paper is incorrect. Below is the correct figure, as well as updates to the surrounding text regarding this figure: Page 3, in section “c-type edge dislocations”: There are two slip systems for c-type dislocations, 1 1 20 0001 and 1 1 00 0001 .
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Page 4:
(1 1 20)[0001] c-type dislocation, (b) the same dislocation looking down on the glide plane, with crystallographic directions as indicated. (c) and (d) are the same for a (1 100)[0001] c-type Figure 4 – (a) The core structure of a dislocation.
The author regrets this error. Reference N. Scott Weingarten (2015). Dislocation Mobilities in GaN from Molecular Dynamics Simulations. MRS Proceedings, 1741, mrsf14-1741-aa01-03, doi:10.1557/opl.2015.25.
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