Excimer Laser Induced Modification of Teflon Surface into Silicon Carbide-Like
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induced Excimer laser carbide-like silicon
modification
of
teflon
surface
into
Tokai University M. OKOSHI, Graduate Student of Faculty Eng. of Physical and Chemical Research(IPCR) K. TOYODA, The Institute 2-1 Hirosawa, Wako, Saitama 351-01, JAPAN M. MURAHARA, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, JAPAN ABSTRACT in the produced was layer carbide-like A silicon an ArF with irradiating by of teflon region near-surface The in a SiH4 and B(CH3)3 mixed gas atmosphere. excimer laser the modification pure photochemical reaction was employed in of the surface was performed and the defluorination process, from B(CH3)3. with boron atoms which were photodissociated the induced photodissociated, also radicals, CH3 The dehydrogenation of SiH4 gas; which followed the production of which could and CH3 radicals The SiHx radicals SiHx radicals. not have induced the dehydrogenation of SiH4 were substituted the surface As a result, atoms of the surface. for fluorine Chemical composition carbide. was photomodified into silicon of the photomodified surface was inspected by the XPS and the and the bonding of the Si-CH3 ATR-FT-IR spectra measurement, atoms which traded off the reduction of the fluorine radicals the of ratio composition The Si/C comfirmed. was photomodified surface was 0.7. INTRODUCTION has technology carbide semiconductor silicon Recently, process, the deposition In studied[l. extensively been and is very important[2![3j, chemical vapor deposition (CVD) growth of the film is generally performed on the the epitaxial over 10000 heated at 3C-SiC[4] [5] [6] or 6H-SiC[7] [8] substrate not easy because heating However, the growth technique is C. and the growth temperature depends of over 1000°C is difficult case Moreover, in substrate. angle of the vicinal on the tilt impurity devices, heterojunction SiC/Si of fabricating occured. into the SiC film is movement from the Si substrate required. Therefore, a low temperature process is the low temperature papers for As one of the interested 800* C heated at 3C-SiC growth on the Si substrate technique, method[9J. laser ablation excimer with demonstrated was of temperature gives a feeling Although the 800 *C substrate the field, technology crystalline in the low temperature Accordingly, for the high. in actuality growth temperature is purpose of the deposition with the low temperature process, we silicon the surface modification of a polymer film into tried carbide at room temperature. the in surface the teflon We have been reported that boron contained gas ambient was photochemically introduced the of the ArF excimer laser with irradiation CH3 or NH2 radicals hydrophilic or to have oleophilic modified light and was CH3 radicals SiHx and this study, In property[10[111]. gases were employed of the reactant produced by dissociation was teflon surface the group, and as a functional carbide. Chemical composition silicon photomodified into like X-ray by the studied surface was the photomodified of Mat. Res. Soc. Symp. Proc. Vol. 236. 0
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