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0963-Q12-01

Fabrication and Characteristics of Low Doped Gallium-Zinc Oxide Thin Film Transistor Ved Prakash Verma1, Dohyun Kim1, Minhyon Jeon2, and Wonbong Choi1 1 Mechanical Engineering, Florida International University, 10555, West Flagler Street, miami, FL, 33174 2 School of Nanoengineering, Inje University, Gimhae, 621-749, Korea, Republic of ABSTRACT We report on fabrication and electrical characteristics of transparent thin film transistor (TFT) based on low Ga-doped zinc oxide (GZO). Low Ga (1 wt%) doped ZnO thin film is deposited as an active channel by rf-magnetron sputtering at room temperature. The devices show a mobility of 5.7 cm2/Vs at low operation voltage of

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