Fabrication of the Large-Area Integrated a-Si Solar Cells
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FABRICATION OF THE LARGE-AREA INTEGRATED a-Si SOLAR CELLS S. Yamazaki, M. Abe, S. Nagayama, K. Shibata, M. Susukida, T. Fukada, M. Kinka, I. Kobayashi, T. Inushima and K. Suzuki Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan 1. PREFACE PIN-structure small-area solar cells using a-Si have been frequently reported on, but only a few reports are available on the study of solar cells using a large-area (10-cm square) substrate, all with a resultant conversion efficiency of above 9.0 %[1,2]. Our study has been concentrated on solar cells using a batch of ten 10-cm square substrates with an average conversion efficiency of 9.5 % or more. As a result, without an anti-reflection coating on the surface of the glass substrate, the following values have been obtained: average conversion efficiency (EFF)=9.63 % (standard deviation of 0.195 %) -Open-circuit voltage (Voc)=12.668 V (standard deviation of 0.215 V) -Short-circuit current (Isc)=78.467 mA (standard deviation of 1.619 mA) -Fill factor (FF)=0.6672 (standard deviation of 0.009) The process, equipment and methods for measurements through which these results were obtained are described below.
2. CELL STRUCTURE Figure 1 illustrates a profile of our prototype solar cell. The substrate is made of soda glass. The transparent conductive film of ITO (indium tin oxide with a thickness of 800 A) and Sn0 2 (200 A thickness) are formed on the substrate with a textured surface structure. The following amorphous semiconductor layers are also deposited on the transparent conduc-
tive film using a multi-chamber system.
Back electrode
Fig. 1. Profile of solar cell.
Na-Si:H I a-Si: H
-Buffer Layer
-P a-SiC: H
ITO
"SnO
2
Glass
A P-type a-SiC:H layer (with an average thickness of 130 A), a buffer layer (a-SiC C , O
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