Fall Meeting Symposia Summaries
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ENERGY BEAM-SOLID INTERACTIONS AND TRANSIENT THERMAL PROCESSING (Symposium A) D. K. Biegelson, G. A. Rozgonyi, and C. V. Shank The Symposium on Energy Beam-Solid Interactions and Transient Thermal Processing, held November 26-30, focused on three main areas: ultrafast electronic and structural processes in highly excited materials (principally silicon); defects, impurity effects, and structural evolution during rapid thermal annealing (millisecond to ten second time scale); and crystal growth of semiconductors over amorphous insulators (SOI). The ultrafast processes in highly excited materials sessions covered a number of topics in the area of highly excited materials studied with short pulse diagnostics. G. Mourou reported recent results using a novel picosecond electron pulse to study a laser-induced phase transition in aluminum by means of time-resolved diffraction. H. Kurz reported the latest results on the influence of phonons in picosecond photon-solid interactions. J. Bok discussed his recent work on the evolution of the reflectivity of silicon irradiated with femtosecond optical pulses, and a number of other papers explored the area of time-resolved melting and phase transitions. The rapid thermal processing segment consisted of 32 oral and poster papers devoted to solid phase transient annealing phenomena. A fundamental issue highlighted during these sessions was addressed by invited speaker T. Siedel of AT&T Bell Labs, who discussed the relation between substrate doping, the dispersion of the absorption coefficient, and the accurate and meaningful measurement of surface temperature. Enhanced dopant diffusion, residual damage, the influence of point defects,- and the options for modeling dopant profiles, were covered in an invited talk by Richard Fair of MCNC. Problems unique to compound semiconductors were reviewed by Jim Williams of RMIT, while John Fan and Bor Tsaur of MIT/Lincoln Labs covered overall implications for device processing. This year Symposia C and A coordinated their papers on RTA and diffusion during two joint sessions. The broad-based technological interest in exploring new options for implantation annealing, controlled diffusion, ultrathin oxides and sulfides, as well as combinations thereof, is so strong that a full-scale symposium on transient thermal processing has been scheduled for the 1985 Fall Meeting, organized by T. Seidel, T. Sedgwick, and B. Tsaur. In the area of SOI, the materials issue of interface stability and the origin and control of low angle grain boundaries were emphasized. Advances in lateral epitaxial overgrowth techniques were presented in liquid and solid phase crystallization. Two excellent review papers were given which outlined device applications for SOI technologies. Finally, Walter Brown courageously presented an excellent review of the symposium and pointed to areas of future development. Symposium Support: Army Research Office, Electronics Division; Office of Naval Research, Air Force Office of Scientific Research. Proceedings: Energy Beam Solid-Interacti
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