Spring Meeting Symposia Summaries
- PDF / 2,920,196 Bytes
- 6 Pages / 590.4 x 792 pts Page_size
- 3 Downloads / 183 Views
The remaining program included sessions on: • Focused Beams (chaired by Dr. R. F. Pease) in which Prof. Kenji Gamo of Osaka University reviewed recent advances in the use of focused ion beams for maskless microfabrication. •Shallow junctions, Channeling Tails and Amorphous Layer Regrowth (chaired by Dr. J. S. Williams) in which many of the origins and solutions to shallow junction fabrication were evaluated. • Ion Beam Mixing, Modification and Adhesion in Metal/Insulator/ Semiconductor Systems (chaired by Drs. J. Amano and B. M. Paine). The two invited talks in this session were by Dr. Gary Farlow from Oak Ridge National Laboratory who addressed the materials aspects of ion beam mixing of metal films on insulators important in electronic packaging, and Dr. T. Venkatesan from Bell Communications Research who reviewed the modification and transport mechanisms which occur in ion bombarded polymers. • High Dose Rate and High Energy Implantation Effects (chaired by T. E. Seidel). Dr. Jim Williams of the Microelectronics Technology Center in Melbourne, Australia, offered an invited overview of recent experiments on solid-phase epitaxial crystallization of silicon induced by irradiation with energetic ions. These and other high dose rate effects such as radiation-induced transport, sputtering, and beam annealing were presented in the contributed portion of the session. • Implantation in Compound Semiconductor Materials and Devices (chaired by Dr. C. E. Evans). The invited overview by Dr. Eirug Davies covered the formidable problems associated with successful annealing of implanted III-V compounds and the promise of RTA techniques. • Buried Insulating Layers, SOS, and SOI (chaired by Dr. D. K. Sadana). Papers in this session explored the fabrication, defect structures, and annealing behavior of buried insulating layers formed by ion implantation as well as SOS and SOI structures.
Symposium A Chairpersons (left to right) F. H. Eisen and B. R. Appleton. PAGE 8, MRS BULLETIN, MAY/JUNE 1985 Downloaded from https://www.cambridge.org/core. IP address: 185.89.101.163, on 31 Jul 2018 at 06:18:58, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/S0883769400042950
• Practical Machine and Implant Considerations (chaired by D r .
M. L. Current). Dr. Geoff Ryding of Eaton Corporation reviewed the equipment and measurement techniques utilized in present implantation applications as well as new high-current accelerators being designed for fabricating buried insulating layers. • Transient Thermal Annealing (chaired by Prof. J. Washburn). Papers in this session presented an in-depth view of the transport, annealing, and electrical characteristics of implanted dopants as a consequence of rapid thermal annealing. The program and participation in Symposium A was international, interdisciplinary, and very interactive. Approximately 37% of the papers were from institutions and laboratories outside the United States. The participation provided by various spectroscopies is
Data Loading...
