Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching
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THE SCIENCE AND TECHNOLOGY OF VAPOR PHASE PROCESSING AND MODIFICATION OF SURFACES
Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching Yuting Zheng1,2, Jinlong Liu1, Ruoying Zhang2, Aude Cumont2, Jue Wang3, Junjun Wei1, Chengming Li1,a), Haitao Ye2,b) 1
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China School of Engineering, University of Leicester, Leicester LE1 7RH, U.K. 3 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China a) Address all correspondence to these authors. e-mail: [email protected] b) e-mail: [email protected] 2
Received: 21 August 2019; accepted: 11 November 2019
The synergetic effects of surface smoothing exhibited during the inductively coupled plasma reactive ion etching (ICP-RIE) of free-standing polycrystalline diamonds (PCDs) were investigated. Changing the assistive gas types generated variable surface oxidation states and chemical environments that resulted in different etching rates and surface morphologies. The main reaction bond mechanism (C–O) during ICP-RIE and the ratio of C–O–C/O–C=O associated with the existence of a uniform smooth surface with root mean square (RMS) roughness of 2.36 nm were observed. An optimal process for PCD smoothing at high etching rate (4.6 lm/min) was achieved as follows: 10% gas additions of CHF3 in O2 plasma at radio frequency power of 400 W. The further etched ultra-smooth surface with RMS roughness
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