Femtosecond laser materials processing of a-Si:H below the ablation threshold
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Femtosecond laser materials processing of a-Si:H below the ablation threshold B. Soleymanzadeh1, W. Beyer2,3, F. Luekermann1, P. Prunici4, W. Pfeiffer1, and H. Stiebig1,5 1. 2. 3. 4. 5.
Molecular and Surface Physics, Bielefeld University, D-33615 Bielefeld, Germany Institut für Silizium-Photovoltaik, HZB, Kekuléstrasse 5, D-12489 Berlin, Germany IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany Solayer GmbH, Sachsenallee 28, D-01723 Kesselsdorf, Germany Institut für Innovationstransfer an der Universität Bielefeld, Universitätsstr. 25, D-33615 Bielefeld, Germany
ABSTRACT Laser processing of thin-film silicon is a promising approach for the realization of polycrystalline silicon for large area electronics and solar cell applications. In this study we investigate the material modification of amorphous hydrogenated silicon (a-Si:H) with different hydrogen content (30%, 13% and
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