Fermi surface properties of PuIn 3
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0986-OO03-04
Fermi Surface Properties of PuIn3 Yoshinori Haga1, Dai Aoki2, Tatsuma D Matsuda1, Hiroshi Yamagami3, Yoshiya Homma2, Yoshinobu Shiokawa2, Kunihisa Nakajima4, Yasuo Arai4, Etsuji Yamamoto1, Akio Nakamura1, and Yoshichika Onuki5 1 Advanced Science Research Center, Japan Atomic Energy Agency, Shirakata-Shirane 2-4, Tokai, Ibaraki, 319-1195, Japan 2 Institute for Materials Research, Tohoku University, Oarai, Ibaraki, 319-1313, Japan 3 Department of Physics, Kyoto Sangyo University, Kyoto, 603-8555, Japan 4 Nuclear Science and Engineering Directorate, Japan Atomic Energy Agency, Shirakata-Shirane 2-4, Tokai, Ibaraki, 319-1195, Japan 5 Graduate School of Science, Osaka University, Toyonaka, 560-0043, Japan
ABSTRACT We report Fermi surface and magnetic properties of a cubic PuIn3 grown by the indium flux method. Fermi surfaces detected by the de Haas-van Alphen effect can be well explained by the band calculations assuming itinerant 5f electrons. INTRODUCTION In the actinide compounds, the 5f-itinerant band model was successfully applied to many U compounds[1]. Such itinerant characteristics, observed in the U and Np compounds, might not be valid in heavy actinides. The wave function of 5f electrons of actinide metals shrinks with increasing the number of 5f electrons. Namely, the Wigner-Seitz radius steeply decreases from Th to Np as in transition metals, has a minimum in Np, and increases with further increase in the number of 5f electrons[2]. The Wigner-Seitz radius of Am is close to the localized 4f-electron radius, and thus the radius of Pu has an intermediate value between those of Np with the 5fitinerant nature and Am with the 5f-localized nature. The de Haas-van Alphen effect is a powerful tool to investigate Fermi surface. By comparing the experimental Fermi surface with the band calculations, the ground state of the f-electrons can be clarified. In this paper, we present the itinerant 5f electronic states observed in a plutonium compound PuIn3.
Fig. 1 Single crystal of PuIn3. EXPERIMENTAL RESULT AND DISCUSSION Single crystals of PuIn3 were grown by the Ga- and In-flux methods, respectively.[3] All the sample preparations were performed in argon-circulated glove boxes to avoid the oxidization of Pu metal. In the present study 94 % enriched 239Pu metal was used. Other dominant isotopes are 240Pu (3 %) and 239Pu (1.6 %). The starting materials as well as excess flux were inserted into an alumina crucible. It was then put into a tungsten-heater furnace in argon atmosphere. The crucible was heated up to 1100 ˚C, maintained at that temperature for 2 hours and then slowly cooled to room temperature over 12 hours. After the crystal growth, gallium metal was added to the crucible in order to reduce the melting temperature of the flux to room temperature, by forming the indium-gallium eutectic. Large single crystals with typical dimensions of 3.5 x 1.5 x 0.9 mm (about 50 mg) were then extracted from the melt, as shown in Fig. 1. The lattice parameter as well as the orientation of the single crystal sample
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