Ferroelectric-Gate Field Effect Transistor Memories Device Physics a
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
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Byung-Eun Park · Hiroshi Ishiwara · Masanori Okuyama · Shigeki Sakai · Sung-Min Yoon Editors
FerroelectricGate Field Effect Transistor Memories Device Physics and Applications Second Edition
Topics in Applied Physics Volume 131
Series Editors Young Pak Lee, Physics, Hanyang University, Seoul, Korea (Republic of) Paolo M. Ossi, NEMAS - WIBIDI Lab, Politecnico di Milano, Milano, Italy David J. Lockwood, Metrology Research Center, National Research Council of Canada, Ottawa, ON, Canada Kaoru Yamanouchi, Department of Chemistry, The University of Tokyo, Tokyo, Japan
Topics in Applied Physics is a well-established series of review books, each of which presents a comprehensive survey of a selected topic within the area of applied physics. Edited and written by leading research scientists in the field concerned, each volume contains review contributions covering the various aspects of the topic. Together these provide an overview of the state of the art in the respective field, extending from an introduction to the subject right up to the frontiers of contemporary research. Topics in Applied Physics is addressed to all scientists at universities and in industry who wish to obtain an overview and to keep abreast of advances in applied physics. The series also provides easy but comprehensive access to the fields for newcomers starting research. Contributions are specially commissioned. The Managing Editors are open to any suggestions for topics coming from the community of applied physicists no matter what the field and encourage prospective book editors to approach them with ideas. 2018 Impact Factor: 0.746
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Byung-Eun Park Hiroshi Ishiwara Masanori Okuyama Shigeki Sakai Sung-Min Yoon •
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Editors
Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Second Edition
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Editors Byung-Eun Park School of Electrical and Computer Engineering University of Seoul Seoul, Korea (Republic of) Masanori Okuyama Graduate School of Engineering Science Osaka University Osaka, Japan
Hiroshi Ishiwara Frontier Collaborative Research Center Tokyo Institute of Technology Yokohama, Japan Shigeki Sakai National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba, Japan
Sung-Min Yoon Advanced Materials Engineering for Information and Electronics Kyunghee University Yongin, Korea (Republic of)
ISSN 0303-4216 ISSN 1437-0859 (electronic) Topics in Applied Physics ISBN 978-981-15-1211-7 ISBN 978-981-15-1212-4 (eBook) https://doi.org/10.1007/978-981-15-1212-4 1st edition: © Springer Science+Business Media Dordrecht 2016 2nd edition: © Springer Nature Singapore Pte Ltd. 2020 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval,
