Ferroelectric photovoltaic effect and resistive switching behavior modulated by ferroelectric/electrode interface coupli
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Ferroelectric photovoltaic effect and resistive switching behavior modulated by ferroelectric/electrode interface coupling Lei Huang1, Min Wei1,* 1
, Chen Gui1, and Lijun Jia1
State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Received: 28 July 2020
ABSTRACT
Accepted: 3 October 2020
The anomalous photovoltaic effect and resistive switching behaviors in ferroelectric materials attract much attention in recent years. Dozens of researches revealed that the two effects coexist and affect each other in electrode/ferroelectric/electrode structures. Therefore, the conductive mechanisms and research progresses of the two effects were discussed in this study, which suggested the interface coupling effect caused by polarization states led to switchable photovoltaic and different resistance states. On the other hand, electrode/ferroelectric/electrode structures have great potential in the application of high-density memories, and a novel non-volatile optoelectronic memory which can write multiple storage states and read information nondestructively can be realized by exploiting the two effects properly.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction In recent years, ferroelectric materials attract much attention due to their great potential in photovoltaic and storage applications, especially the anomalous photovoltaic effect (APVE) and resistive switching (RS) behaviors. Ferroelectric materials are a kind of pyroelectric materials, which have excellent piezoelectricity and large dielectric constant. But the unique feature of ferroelectric materials is their nonvolatile spontaneous polarization, and polarization can be easily modulated by external electrical
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https://doi.org/10.1007/s10854-020-04600-3
stimulation. Ferroelectric photovoltaic devices have ultrahigh photovoltage [1] and reversible photovoltaic outputs [2], which theoretically have a greater photoelectric conversion efficiency (PCE) than silicon-based PN junction photovoltaic devices. For explaining the anomalous photovoltaic phenomenon, such as the bulk photovoltaic effect (BPVE), domain wall photovoltaic effect (DWPVE) and depolarization field effect have been developed. But there is still no clear conclusion yet [1, 3–5]. Studies on ferroelectric RS are also meeting the similar dilemma. Generally, ferroelectric memristor is non-volatile. Compared
J Mater Sci: Mater Electron
with ferroelectric random-access memory (FRAM), information in ferroelectric memristor can be read out non-destructively [6]. Besides, ferroelectric memristor has better stability and higher operation speed over normal metal oxide resistive random-access memory (RRAM) [7–9]. However, the unclear conduction mechanisms hindered their practical application. Interestingly, the basic structure of both RRAMs and ferroelectric photovoltaic devices is the typical top electrode
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