Resistive switching effect based on graphene-embedded poly(4-vinyl phenol) composite film by spinning coating
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Resistive switching effect based on grapheneembedded poly(4-vinyl phenol) composite film by spinning coating Enming Zhao1, Xiaoqi Li1, Xiaodan Liu1,* Chuanxi Xing3
, Chen Wang1, Guangyu Liu1, Shuangqiang Liu2, and
1
School of Engineering, Dali University, Dali, China School of Physics and Astronomy, Sun Yat-Sen University, Zhuhai, Guangdong, China 3 School of Electrical and Information Engineering, Yunnan Minzu University, Kunming, China 2
Received: 7 May 2020
ABSTRACT
Accepted: 2 September 2020
Resistive switching effect based on graphene-embedded poly(4-vinyl phenol) composite film by spinning coating have been investigated. The nonvolatile WORM characteristics were researched. The influence of the increasing content of graphene on the resistive switching characteristics is mainly manifested in the increase of current in high resistance state, the decrease of the threshold voltage and the decrease of the ON/OFF ratio. The nonvolatile WORM characteristics of graphene poly(4-vinyl phenol) composite thin films could be ascribed to continuous conductive pathways caused by the graphene during spin-coating of the poly(4-vinyl phenol) composites on ITO substrates.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Resistance random access memory (RRAM) devices have received considerable attention due to potential candidates for next-generation nonvolatile memories [1–9]. So much has aroused the attention is because of its many virtues, for instance, simple structure and easy to realize miniaturization (down to 2 nm [10]), furthermore low power dissipation and low voltage operation, fast reading and writing and multilevel data storage [11–13]. For the past few years, graphene polymer composite materials have been widely used in organic electronics [14–16]. Graphene have been
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https://doi.org/10.1007/s10854-020-04403-6
extraordinarily attractive due to their application in a wide range of mobile devices, aerospace, new energy batteries. Many devices have been reported, a lot of them are based on graphene composites [17, 18]. In memory devices, carbon nanocomposites have been used for charging and discharging islands. Many performance improvements have been made by mixing carbon nanostructures for instance graphene in functional layers such as graphene [19], polyvinylpyrrolidone [20], poly (9-vinylcarbazole) [21], and poly(3,4 ethylenedioxythiophene) [22]. Such devices shows good resistive switching performance, as the circumstances may require, being potentially useful for memory devices.
J Mater Sci: Mater Electron
In view of many remarkable results on resistive switching and memory effects in composite polymer systems [23–25], the influence of mixing level on resistive switching characteristics of composite polymeric systems should be studied further. It seems reasonable to count on that mixing levels will have significant influence on charge transport processes in the bulk and at the interface and will have a evide
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