Ferroelectric Thin Film System in Package Devices with Integrated Capacitors of 100 nF/mm2 & Breakdown Voltages of 9
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FERROELECTRIC THIN FILM SYSTEM IN PACKAGE DEVICES WITH INTEGRATED CAPACITORS OF 100 nF/mm2 & BREAKDOWN VOLTAGES OF 90 V Mareike Klee1, Wilco Keur1, Ruediger Mauczok1, Aarnoud Roest2, Klaus Reimann2, Linda Peters2, Kai Neumann3, and Rainer Kiewitt4 1 Philips Research Eindhoven, HighTech Campus 4, Eindhoven, 5656AE, Netherlands 2 NXP Semiconductors / Corporate I&T / Research, Eindhoven, 5656AE, Netherlands 3 NXP Semiconductors, Hamburg, 22529, Netherlands 4 Philips Research Aachen, Aachen, 52066, Germany ABSTRACT Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of up to 90 V have been achieved. INTRODUCTION Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance functions such as passive functions with active functions in miniaturized modules. Dielectric, ferroelectric and piezoelectric thin films are excellently suited to realize System in Package (SiP) devices, which are multifunctional modules, where individual functions are implemented in their optimum technology with respect to performance, size, and cost. SiP plays especially a role for devices based on non-traditional materials and processes, which are not available in standard CMOS technologies and is thus a complementary technology to system-on-chip which follows the CMOS roadmap as predicted by Moore’s law. Small sized system in package devices, making use of ferroelectric thin films will be discussed: INTEGRATED DISCRETES MODULES WITH HIGH PERFORMANCE INTEGRATED PASSIVES Integration of ferroelectric MIM capacitors with resistors and ESD protection diodes in small chip-scale package Integration of passive functions (capacitors, resistors and inductors) with active functions into miniaturized modules is a prerequisite for next generation base-band, audio and power circuits of mobile and portable electronic systems. Integration of passive functions with active functions into System in Package devices reduces component count and frees up board space for additional functionality in e.g. multi-band, multi-mode communication systems. Numerous passive integration platforms are investigated world wide, where passive functions such as capacitors, resistors or inductors are integrated using either laminate technologies or LTCC (low temperature cofired ceramic) technologies or thin film technologies on insulating substrates such as glass or ceramic [1, 2, 3, 4, 5].
We have opened the way for integrated passive functions such as capacitors and resistors with active functions such as ESD protection diodes in one integrated module [6]. This integration of ferroelectric capacitors with resistors and ESD protection diodes in a small chip-scale package enables a board space saving of up to 80%. The devices are realized by
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