Field emission enhancement of DLC films using triple-junction type emission structure
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Field emission enhancement of DLC films using triple-junction type emission structure Namwoong Paik, Michael Martin, Daeil Kim, Sungjin Kim, Steven Kim and Kie Moon Song1 SKION Corporation, Hoboken, New Jersey, 07030 U. S. A. 1 Department of Applied Physics, Konkuk University, Chungju 380-701 Korea ABSTRACT Negative Electron Affinity (NEA) of Diamond-like-Carbon (DLC) films has made DLC films a favorable candidate for field emission display (FED). It was suggested that triple-junction type structure could enhance the field emission characteristics. A triple junction is defined as the intersection of a semiconductor surface with a metal substrate in vacuum. In this study, field emission enhancement in triple junction type structures was investigated. As a metal substrate 5000Å of Mo films were deposited. Then, 3000-4000 Å of DLC film was deposited as a semiconductor material. Thin film layers were made using a negative ion beam source. After the deposition, using an excimer laser, we removed the DLC layer and made circular shaped triple junction trenches with a diameter of 25–250 µm. The field emission characteristics such as I-V characteristics turn on voltage and emission lifetime data were obtained for a diode type field emission measurement system. Overall results show significantly enhanced performance of field emission characteristics such as uniform emission over patterned area, reduced turn on voltages and longer lifetimes can be achieved.
INTRODUCTION Due to its advantages such as increased brightness, improved viewing angle and lower power consumption than Liquid Crystal Displays (LCD), Field Emission Display (FED) has become a big research and development field for the next generation display technology. In FED development, conventionally, molybdenum and Si tips were widely used as cold-cathode material1. However, Mo can be easily contaminated and has poor mechanical properties. Silicon is rather fragile and has low thermal conductivity2. Recently, DLC films become a favorable candidate for FED thanks to its Negative Electron Affinity (NEA), high thermal conductivity, chemical inertness and high hardness3. Also, field emission from DLC (diamond-like carbon) films is of particular interest because they can be made at room temperature, over large areas and on various kinds of substrates such as glass, metals, semiconductors, ceramics and polymers. Several years ago a new electron-emission mechanism so called triple-junction type emission for cold cathodes was proposed4. A triple junction is the intersection of a semiconductor surface with a metal substrate in vacuum. Unlike conventional mechanisms, in which electrons tunnel from a metal or semiconductor directly into vacuum, the electrons in the triple-junction type structure tunnel from a metal into diamond surface states, where they can be accelerated and ejected into vacuum.
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EXPERIMENTAL SETUP In this study, we prepared two different sets of samples; the conventional diode structure and the triple junction structure. As a metal substrate 5000Å
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