Flexible Polymer Atomic Switches using Ink-Jet Printing Technique
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Flexible Polymer Atomic Switches using Ink-Jet Printing Technique Saumya R. Mohapatra, Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, and Masakazu Aono International Center for Materials Nanoarchitectnics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. ABSTRACT Gapless-type atomic switches were fabricated on a flexible plastic substrate by printing ‘solid polymer electrolyte’ (SPE) layers using suitable ink and drop-on-demand ink-jet technique. High surface energy difference between Pt microelectrode patterned on the plastic substrate and the substrate itself, led to the successful printing of electrolytic solution on a bottom Pt electrodes. Bipolar resistive switching behavior was observed in Ag/SPE/Pt cross-point structures under electrical bias. The switching between ON and OFF states is attributed to the formation and dissolution of a metal filament between the electrodes. The cells also exhibited stable switching behavior under mechanical stress as performed by substrate bending. Switching characteristics measured under mechanical stress and without stress are matching well. The results demonstrate that the SPE-printed atomic switch has great potential for flexible switch/memory applications. INTRODUCTION Over last three decades, ion conductive solid polymer electrolytes (SPEs) were considered as the most suitable ionic material to develop all-solid-state and flexible electrochemical energy storage devices. Evidently, the easier fabrication process and better stability properties of SPEs in comparison to gel/liquid and inorganic electrolytes keeps the research interest always in favor of SPEs [1, 2]. But, the issue of low ionic conductivity at ambient temperature of SPEs still remains a major challenge. Despite many efforts like nanocomposites formation [3, 4], addition of plasticizer [5] or incorporation of ionic liquids [6] in SPE matrix, the ionic conductivity could not be improved up to the ideal limit of ~ 103 S.cm-1 at room temperature for use in conventional electrochemical devices. However, notwithstanding this fact, the interest in this class of material is ever increasing because of some recent observations of new functionalities based on nanoionic phenomena. As a note, in reports related to layer-by-layer assembled electrochromic devices [7], SPE-gated FETs based on graphenes [8] and carbon nanotubes [9], the presence of SPE layer had greatly influenced the device properties. Also very recently, our group for the first time demonstrated the observation of ‘Resistive switching Memory’ (RSM) phenomenon in SPE based Metal-Insulator (SPE)-Metal (MIM) structures [10]. Cells comprising of a very thin layer of Polyethylene Oxide (PEO)-AgClO4 complex sandwiched between Pt and Ag microelectrodes showed stable bipolar switching characteristics. The observed switching between two resistance states originates from the formation and dissolution of a metal filament in the SPE layer, which is referred to as a gapless-type atomic switch [11]. Fabrication
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