Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN
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Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN O. Gelhausen1, M. R. Phillips1,E. M. Goldys2, T. Paskova3, B. Monemar3, M. Strassburg4,5 and A. Hoffmann4 1 Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007 Australia 2 Division of Information and Communication Sciences, Macquarie University, North Ryde, NSW 2109, Australia 3 Material Science Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden 4 Institute for Solid-State-Physics, Technical University Berlin, 10623 Berlin, Germany 5 Department of Physics and Astronomy, Georgia State University, Atlanta, GA-30303, USA ABSTRACT Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20-30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (VN-H) complex. Due to the small dissociation energy (
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