Formation of New Surface Layers on Ceramics by Ion Assisted Reaction
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Formation of new surface layers on ceramics by ion assisted reaction S. K. Koh, Y-B. Son, J-S. Gam, K-S. Han, W. K. Choi, and H-J. Jung Division of Ceramics, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 130 – 650, Korea (Received 10 June 1997; accepted 10 November 1997)
Ar1 ions with 1 keV energy were irradiated on aluminum nitride in an O2 environment and on aluminum oxide in a N2 environment. AlON on AlN and AlN on Al2 O3 are formed by the Ar1 irradiation in O2 gas and N2 gas environments, respectively, and the formation of new surface layers is confirmed on the basis of Al2p near core levels and ˚ films were deposited by O1s, N1s core levels XPS depth profile analysis. Cu(1000 A) ion-beam sputtering on Ar1 irradiated/unirradiated AlN surfaces, and the change of the adhesion strength was investigated by a scratch test. Cu films deposited on the irradiated AlN under an O2 environment showed higher bond strength than that on the unirradiated AlN. The improvement of bond strength of Cu films on the AlN surface resulted from the interface bonds between Cu and the surface layers. The bending strength of polycrystalline Al2 O3 irradiated by Ar1 ions in N2 environment was also increased and the formation of nitride layer on the alumina was confirmed. A possible new surface layer formation mechanism on ceramics by the ion assisted reaction has been discussed in terms of surface analysis, chemical bond, and mechanical strength.
I. INTRODUCTION
The creation of a new surface layer on materials has been of interest in many applications for improving mechanical properties, adhesion between dissimilar materials, and chemical resistance from severe environments. Many methods have been developed to change surface properties by coating different materials, by reacting surface in plasma zone, by irradiating inactive or active ion beam, implanting foreign atoms, etc. Bending strength improvements, such as Zr1 , Ti1 , and W1 on ceramics using high energies ranging from a few hundred keV to MeV have been investigated by many researchers.1–3 The increment of mechanical strength by high energy ion implantation is attributed to the compressive surface residual stress by the volume expansion in the implanted region with the defects.4 However, surface modification by energetic particles has created damages on the surface, and damages on the surface are a critical issue for the applications, even though a new functional layer has been generated on the materials, and physical and chemical properties such as adhesion, surface hardness, corrosion resistance, wear resistance, pyn-type semiconductor, etc. have been improved. In the previous reports, the creation of functional layers on the polymers has been succeeded by the ion assisted reaction (IAR), and a great improvement of adhesion between adhesive and polytetrafluoroethylene (PTFE) has also been shown with surface chemical analysis. The functional layers on the polymer surface were controlled by ion beam energ
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