Four Current Examples of Characterization of Silicon Carbide
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Four Current Examples of Characterization of Silicon Carbide S. Bai1, Yue Ke1, Y. Shishkin1, O. Shigiltchoff1, R.P. Devaty1, W.J. Choyke1 D. Strauch2, B. Stojetz2, B. Dorner3, D. Hobgood4, J. Serrano5, M. Cardona5, H. Nagasawa6, T. Kimoto7, and L.M. Porter8 1 Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA 2 Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany 3 Institut Laue-Langevin, 38042 Grenoble, France 4 Cree, Inc., 4600 Silicon Drive, Durham, NC 27703 5 Max-Planck-Institut, Heisenbergstrasse 1, 70569 Stuttgart, Germany 6 Hoya Advanced Semiconductor Technologies Co. Ltd., Kanagawa 229-1125, Japan 7 Dept. of Electronic Science & Engineering, Kyoto University, Kyoto 606-01, Japan 8 Dept. of Mat. Sci., Carnegie Mellon Univ., Pittsburgh, PA 15213, USA ABSTRACT A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperature photoluminescence (LTPL). Inelastic neutron scattering (INS) and X-ray Raman scattering (XRS) are compared for acoustical modes of 4H SiC. Schottky barrier heights are obtained for 4H and 6H SiC on different crystal faces using three different measuring techniques. Scanning electron microscopy (SEM) is used to display a variety of porous SiC morphologies achieved in n-type and p-type SiC. This paper is intended to be the introduction to the “CHARACTERIZATION” section of this volume. To serve this purpose we illustrate the subject matter with new results using four distinct experimental techniques. A. LOW TEMPERATURE PHOTOLUMINESCENCE (LTPL) PROFILING OF THICK EPITAXIAL 3C SIC GROWN ON UNDULANT (001) SI Introduction The first wave of 3C SiC epitaxial growth on (001) Si was started in 1983 [1]. These efforts produced thin films of less than 20µm, with a high density of lattice defects. When removed from the Si substrates they were extremely fragile and subject to cleaving into small strips. These phenomena were studied in numerous papers [2-5]. Growth of improved quality 3C-SiC films on 6H SiC substrates was demonstrated in 1989 [6]. For the next decade homoepitaxy of 4H and 6H SiC reigned supreme. Nagasawa and colleagues renewed the interest in 3C SiC with their introduction of 3C SiC grown on “undulant” (001) Si large diameter substrates [7]. Here we shall report on the LTPL profiling of a 219µm thick 3C SiC layer grown on undulant (001) Si. Experimental procedure LTPL measurements were performed on a large, 219µm thick 3C SiC film cut into a number of pieces. We irradiated the samples with a 30mW He-Cd laser (325nm) at 2K and measured the 3C SiC film front surface whilst on the (001) Si substrate. We then removed the film from the
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Figure 1. 2K spectrum of the “front” side of a 219 µm thick 3C SiC film removed from undulant (001) Si. The “back” side is the side which was separated from the undulant (001) Si substrate. N0 is the no-phonon line of the exciton bound to the neutral nitrogen donor and TA, LA, TO, and LO are first order phonon replicas. DII and DI are the two most com
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