Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors
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Frequency dependence of dielectrophoretic fabrication of single‑walled carbon nanotube field‑effect transistors Yousef Adeli Sadabad4 · Amirreza Khodadadian1,2 · Kiarash Hosseini Istadeh4 · Marjan Hedayati4 · Reza Kalantarinejad4 · Clemens Heitzinger1,3 Received: 9 April 2020 / Accepted: 28 July 2020 © The Author(s) 2020
Abstract A new theoretical model for the dielectrophoretic (DEP) fabrication of single-walled carbon nanotubes (SWCNTs) is presented. A different frequency interval for the alignment of wide-energy-gap semiconductor SWCNTs is obtained, exhibiting a considerable difference from the prevalent model. Two specific models are study, namely the spherical model and the ellipsoid model, to estimate the frequency interval. Then, the DEP process is performed and the obtained frequencies (from the spherical and ellipsoid models) are used to align the SWCNTs. These empirical results confirm the theoretical predictions, representing a crucial step towards the realization of carbon nanotube field-effect transistors (CNT-FETs) via the DEP process based on the ellipsoid model. Keywords Dielectrophoresis · Single-walled carbon nanotube · Spherical model · Ellipsoid model
1 Introduction A graphene sheet rolled up into a cylinder forms a SWCNT, which can be either metallic or semiconducting depending on its geometrical structure. SWCNTs are a material with unique properties such as high tensile strength, high electrical/thermal conductivity, high elastic modulus, and ductility. All these properties mean that CNT-based products have great scientific importance, in addition to their great potential for use in technical applications such as thermal conduction enhancement, composites, filtration, sensors, and microelectronics. Due to their unique electronic and mechanical properties, carbon nanotubes have attracted great attention for use in a * Amirreza Khodadadian [email protected] 1
Institute for Analysis and Scientific Computing, Vienna University of Technology (TU Wien), Wiedner Hauptstraße 8–10, 1040 Vienna, Austria
2
Institute of Applied Mathematics, Leibniz University Hannover, Welfengarten 1, 30167 Hanover, Germany
3
School of Mathematical and Statistical Sciences, Arizona State University, Tempe, AZ 85287, USA
4
Shezan Research and Innovation Center, No. 25, Innovation 2 St., Pardis TechPark, Tehran, Iran
broad range of applications, especially in nanoelectronics and sensing applications [1–3]. Electronic devices fabricated using individual SWNTs have shown outstanding device performance, surpassing those of silicon. A critical step to obtain these practical devices is to deposit well-organized and highly aligned CNTs at desired locations. There are a number of different methods to align CNTs, such as chemical and biological patterning, Langmuir–Blodgett assembly, etc. The interested reader can refer to Refs. [4–9]. However, these methods have their shortcomings and limitations, such as intensive preparation processes or the requirement for assisting materials with special pr
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