Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems
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Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems Omid Habibpour1, Wlodzimierz Strupinski2, Niklas Rorsman1, Pawel Ciepielewski2 and Herbert Zirath1 1 Microwave Electronics Laboratory, Department of Microtechnology and nanoscience, Chalmers University of Technology, 412 96 Göeborg, Sweden. 2 Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland. ABSTRACT We are developing millimeter wave (mm-wave) components and circuits based on hydrogen-intercalated graphene. The development covers epitaxial graphene growth, device fabrication, modelling, integrated circuit design and fabrication, and circuit characterizations. The focus of our work is to utilize the distinctive graphene properties and realize new components that can overcome some of the main challenges of existing mm-wave technologies in term of linearity. INTRODUCTION Graphene is a zero band-gap semiconductor with a linear band-structure. This unique band-structure gives rise to a very high carrier mobility and ambipolar behavior in graphene [1]. The lack of a bandgap limits maximum frequency of oscillation (fMax) in Graphene field effect transistors (G-FETs). Therefore, the demonstrated G-FET based amplifiers have a low gain (< 10dB) and the operating frequencies are below 15 GHz [2-3]. However, the lack of a bandgap allows us to develop new G-FET based ultra-linear and wideband components capable of outperforming traditional technologies. G-FET based resistive mixers, modulators and demodulators operating at millimeter wave (mm-wave) are such promising components. In these components, G-FETs are biased in the linear region. The lack of a bandgap allows extending GFET linear region to higher input power levels. In addition, it results in an odd symmetry in output characteristics of G-FETs, which enhances the linear behavior of G-FETs. Prior to our work, several G-FET based integrated circuit (IC) mixers have been demonstrated [4-5]. The operating frequency of these circuits are limited to a few GHz and they have a very narrow bandwidth. Our developed mixers operate at 80-100 GHz with a lowest reported conversion loss (17 dB). In future mm-wave communication systems, the linearity of components will be the first priority. This is because, in a wideband system, the linearity can significantly affect major system level parameters such as receiver sensitivity and link budget. The linearity of current components such as mixers and power detectors based on existing technologies cannot satisfy future demands. Therefore, G-FET based components can play important roles in future wireless communication systems. In this paper, we present our work on developing generic G-FET components and circuits based on hydrogen-intercalated epitaxial graphene for high-data rate applications.
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