Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions
- PDF / 748,777 Bytes
- 7 Pages / 612 x 792 pts (letter) Page_size
- 14 Downloads / 277 Views
Advances:
Email alerts: Click here Subscriptions: Click here Commercial reprints: Click here Terms of use : Click here
Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions Zeke Insepov, Ardak Ainabayev, Kumiszhan Dybyspayeva, Abat Zhuldassov, Sean Kirkpatrick, Micheal Walsh and Anatoly F. Vyatkin MRS Advances / FirstView Article / May 2016, pp 1 - 6 DOI: 10.1557/adv.2016.205, Published online: 22 March 2016
Link to this article: http://journals.cambridge.org/abstract_S205985211600205X How to cite this article: Zeke Insepov, Ardak Ainabayev, Kumiszhan Dybyspayeva, Abat Zhuldassov, Sean Kirkpatrick, Micheal Walsh and Anatoly F. Vyatkin Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.205 Request Permissions : Click here
Downloaded from http://journals.cambridge.org/ADV, IP address: 141.211.4.224 on 19 May 2016
MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.205
Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions Zeke Insepov1,2Ardak Ainabayev1, Kumiszhan Dybyspayeva1, Abat Zhuldassov1, Sean Kirkpatrick3, Micheal Walsh3, and Anatoly F. Vyatkin4 1
National Laboratory of Nazarbayev University, Astana, Kazakhstan Purdue University, West Lafayette, IN, USA 3 Exogenesis Corp., Billerica MA, USA 4 Institute of Microelectronics Technology and High Purity Materials RAS, Moscow, RU 2
ABSTRACT Defect formation in the samples of graphene, graphene oxide and silicon irradiated with Ar cluster and highly-charged ion irradiations were studied. Ar cluster ions, with acceleration energy E = 30 kV (Exogenesis nAccel00, Boston, USA) and total Ar cluster ion fluences ranged from 1x109 cm-2 to 1x1013 cm-2 were directed toward various surfaces. Highly-charged ions (HCI) bombardment on surfaces with highly charged Xeq+ (q = 22) was employed at Eurasian National University, Kazakhstan, using a DC-60 cyclotron accelerator. Multi-layer graphene oxide, single-layer graphene- (SLG), few-layer of graphene (FLG) and polished Si are used for irradiation experiments. The study of irradiated samples was conducted by Raman spectroscopy, atomic force microscopy (AFM). Uniformly distributed defects and craters were observed on the surfaces of graphene, graphene oxide and silicon irradiated with cluster and HCI beams in our experiments. Ab-initio density-functional theory (DFT) was used to study point defects and molecular-dynamics (MD) simulations were used for studying formation of craters due to gas cluster ion impacts in graphene. The results of simulations were compared with experimental craters and surface shape. INTRODUCTION Graphene exhibits high room temperature thermal conductivity (∼(4.84 ( 0.44) × 103 to (5.30 ( 0.48) × 103 W/mK) [1], Young’s modulus (∼1 TPa), elasticity (20%) and breaking strength (~40N/m) [2,3]. Besides, graphene has good chemical stability [4] and unique electronic properties with high intrinsic m
Data Loading...
