Graphene Metrology Using Fluorescence Quenching of Different Fluorescent Dyes
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Graphene Metrology Using Fluorescence Quenching of Different Fluorescent Dyes Hamed Hosseini Bay1, Maziar Ghazinejad1, Miroslav Penchev2, Isaac Ruiz2, Zafer Mutlu3, Mihrimah Ozkan2 and Cengiz S. Ozkan1 1 Mechanical Engineering Department, University of California, 900 University Ave., Riverside, CA 92521, U.S.A. 2 Electrical Engineering Department, University of California, 900 University Ave., Riverside, CA 92521, U.S.A. 3 Materials Science and Engineering Program, University of California, 900 University Ave., Riverside, CA 92521, U.S.A. ABSTRACT The unique structure and properties of graphene initiated broad fundamental and technological research, and highlighted graphene as a new candidate for various applications such as energy storage, solar cells and electronic devices. Chemical vapor deposition (CVD) has been utilized for industrial large-scale synthesis of graphene. Regardless of the synthesis process, graphene should be transferred to arbitrary substrates for different applications. The transfer processes, introduce defects such as wrinkles and cracks in graphene which compromise the properties and applications. In recent years, fundamental research has been focused on characterization of graphene to develop new techniques for large-scale, high-resolution graphene metrology. Herein, a complementary high throughput metrology technique using fluorescent quenching is further investigated for different fluorescent dyes to characterize CVD synthesized graphene. INTRODUCTION Graphene is a two dimensional carbon allotrope, with carbon atoms packed in a sheet with hexagonal lattice [1]. Each carbon atom has sp2 hybridization and is bonded to three carbon atoms in the structure and the overlap of the remaining p orbitals, results in delocalized ĘŚ bonds. The discovery of graphene was made in 2004 by Andre Geim and Konstantin Novoselov at The University of Manchester, and Nobel Prize in Physics 2010 was awarded to them for groundbreaking experiments regarding the two-dimensional material graphene. In graphene, both electrons and holes are considered as charge carriers and further mapping of the electronic structure onto the massless Dirac theory proves zero effective mass for carriers [2]. The unique electronic structure and exceptional electrical, optical, thermal and mechanical properties of graphene, initiated broad fundamental and technological research, and highlighted graphene as a new candidate for various industrial applications [1,2]. There are many methods developed for graphene synthesis such as chemical vapor deposition (CVD), epitaxial growth on silicon carbide and mechanical or chemical exfoliation of graphite [3]. Among all methods, chemical vapor deposition using a transitional metal (copper) thin foil substrate as catalyst is believed to be the most promising process for large scale industrial synthesis of graphene [3]. After the synthesis process, CVD grown graphene layer should be transferred to other substrates like Si/SiO2 or glass slides. Defects such as wrinkles, cracks and discontinuity on gra
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