Growth of single-crystal diamonds in microwave plasma
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MA TECHNOLOGY
Growth of SingleCrystal Diamonds in Microwave Plasma A. P. Bolshakova, V. G. Ralchenkoa, A. V. Polskiya, V. I. Konova, E. E. Ashkinazia, A. A. Khomicha, G. V. Sharonovb, R. A. Khmelnitskyc, E. V. Zavedeeva, A. V. Khomichd, and D. N. Sovyka a
Prokhorov Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117991 Russia email: [email protected] b Sevchenko Research Institute of Applied Physical Problems, Belarussian State University, ul. Kurchatova 7, Minsk, 220064 Belarus c Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991 Russia d Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141120 Russia Received June 20, 2011
Abstract—A microwave plasma (2.45 GHz) was used for depositing single crystal diamond layers at the dep osition rate up to 40 μm/h in hydrogen–methane mixtures on the substrates from natural and synthetic dia mond with the (100) deposition surface and with the size up to 5 × 5 mm. The structure and the defect–impu rity composition of the fabricated single crystals with the thickness up to 600 μm have been investigated using Raman spectroscopy, photoluminescence spectroscopy, cathode luminescence spectroscopy, and electron and optical microscopy. A high quality and purity of the diamond layers deposited from a plasma was con firmed. DOI: 10.1134/S1063780X12080089
INTRODUCTION The development of the technique for growing dia mond coatings and plates from a gas phase (the method of chemical vapor deposition (CVD)) during the last 10–15 years has made this unique material accessible and relevant for electronics (heat sink ele ments for microwave devices, detectors of ionizing radiation, light diodes on excitons) [1–3], optics (win dows for IR lasers and gyrotrons, fiber lasers) [4–6], mechanics [7], and other fields where the extreme properties of diamond are used. The methods of dia mond synthesis from a microwave plasma chemical vapor deposition (MPCVD) in the mixtures of hydro carbons (methane) and hydrogen provides the maxi mal purity of the material as compared to other known CVD methods and allows obtaining poly and single crystal diamonds with the minimal concentration of boron and nitrogen impurities (less than 100 ppb) [8], i.e., one to two orders of magnitude lower than in the best natural crystals or the crystals synthesized at high pressures and temperatures (the HPHT method). An important direction of modern investigations of the CVD diamond technology is the fabrication of a single crystal diamond since the existence of grain boundaries, twins, and other types of defects in poly crystalline films drastically deteriorates the efficiency of diamondbased devices (detectors, light diodes, FETs, etc.) decreasing the lifetime and mobility of charge carriers. Modern plasmachemical microwave reactors allow fabricating epitaxial diamond films with the thickness from several nanometers to several milli
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